The DOI matches its Crossref record; 25 of the 25 references it cites were found in a registry or an index.
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Abstract
Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.
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Citations
Cites
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
Lang, D. V. (1974) · Journal of Applied Physics · doi:10.1063/1.1663719 · Cited by 3,735
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
Vetury, R., Zhang, N. Q., Keller, S., & Mishra, U. K. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.906451 · Cited by 1,453
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
Slack, G. A. (1964) · Journal of Applied Physics · doi:10.1063/1.1713251 · Cited by 695
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., & Zanoni, E. (2008) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2008.923743 · Cited by 675
del Alamo, J. A., & Joh, J. (2009) · Microelectronics Reliability · doi:10.1016/j.microrel.2009.07.003 · Cited by 502
Self-citationTrapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Thermal conductivity of GaN films: Effects of impurities and dislocations
Zou, J., Kotchetkov, D., Balandin, A. A., Florescu, D. I., & Pollak, F. H. (2002) · Journal of Applied Physics · doi:10.1063/1.1497704 · Cited by 342
Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U. K., Canali, C., & Zanoni, E. (2004) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2004.835025 · Cited by 330
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
Joh, J., & del Alamo, J. A. (2008) · IEEE Electron Device Letters · doi:10.1109/led.2008.917815 · Cited by 306
Self-citationSarua, A., Ji, H., Kuball, M., Uren, M. J., Martin, T., Hilton, K. P., & Balmer, R. S. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882274 · Cited by 267
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Kozak, J. P., Zhang, R., Porter, M., Song, Q., Liu, J., Wang, B., Wang, R., Saito, W., & Zhang, Y. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3266365 · Cited by 441
A Review of GaN HEMT Dynamic On-Resistance and Dynamic Stress Effects on Field Distribution
Gill, L., DasGupta, S., Neely, J. C., Kaplar, R. J., & Michaels, A. J. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3318182 · Cited by 68
Metadata
- Authors
- Joh, J., & del Alamo, J. A.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2011-01
- Volume
- 58
- Issue
- 1
- Pages
- 132-140
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2041714088
- Cited by
- 441
- References
- 25
- FWCI
- 9.53
- Type
- journal article
- Language
- en
- Open access
- closed
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- Joh, J., & del Alamo, J. A. (2011). A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2010.2087339
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