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Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories
Abstract
The electronic behavior of the chalcogenide material used in phase-change memory (PCM) plays a key role in defining the operation voltages and times of the memory cell. In particular, the threshold voltage for electronic switching of the amorphous chalcogenide determines the boundary between programming and readout operation, while its resistance allows the recognition of the bit status. This paper present a time-resolved analysis of threshold voltage and resistance in a PCM. Both dynamics of threshold voltage and resistance display a fast transient, named recovery behavior, in the first 30 ns after programming. A slower, nonsaturating drift transient is found for longer times. The two transients are discussed referring to electronic and structural rearrangements in the amorphous chalcogenide. Finally, the impact on the device level is considered
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Citations
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“However, the resistance can drift in time as a result of the metastable nature of the amorphous state 95 .”
BackgroundSelf-citationEquivalent-accuracy accelerated neural-network training using analogue memory
Ambrogio, S., Narayanan, P., Tsai, H., Shelby, R. M., Boybat, I., di Nolfo, C., Sidler, S., Giordano, M., Bodini, M., Farinha, N. C. P., et al. (2018) · Nature · doi:10.1038/s41586-018-0180-5 · Cited by 1,151
Phase change memory technology
Burr, G. W., Breitwisch, M. J., Franceschini, M., Garetto, D., Gopalakrishnan, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L. A., Padilla, A., et al. (2010) · Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena · doi:10.1116/1.3301579 · Cited by 916
Phase Change Materials and Their Application to Nonvolatile Memories
Raoux, S., Wełnic, W., & Ielmini, D. (2010) · Chemical Reviews · doi:10.1021/cr900040x · Cited by 873
Self-citationAn overview of phase-change memory device physics
Le Gallo, M., & Sebastian, A. (2020) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/ab7794 · Cited by 460
Metadata
- Authors
- Ielmini, D., Lacaita, A. L., & Mantegazza, D.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2007-02
- Volume
- 54
- Issue
- 2
- Pages
- 308-315
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2114924497
- Cited by
- 268
- References
- 0
- FWCI
- 9.69
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ielmini, D., Lacaita, A. L., & Mantegazza, D. (2007). Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2006.888752
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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