The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
Abstract
Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of conductive filaments through insulating materials, such as metal oxides and chalcogenide glasses. Understanding the mechanisms for filament formation and disruption in resistive switching materials is a critical step toward the development of reliable and controllable RRAM for future-generation storage. In particular, the capability to control the filament resistance and the reset current through the compliance current during filament formation may provide a key signature to clarify the switching mechanism. This paper provides a physically based explanation for the universal resistance switching in bipolar RRAM devices. A numerical model of filament growth based on thermally activated ion migration accounts for the resistance switching characteristics. The same physical picture is extended to numerically model the reset transition. The impact of migration parameters and experimental setup on the set/reset characteristics is discussed through numerical simulations.
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Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
Park, G.-S., Li, X.-S., Kim, D.-C., Jung, R.-J., Lee, M.-J., & Seo, S. (2007) · Applied Physics Letters · doi:10.1063/1.2813617 · Cited by 238
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“…stems from the physics of the device itself, which involves electron drift and capacitive charging in CMOS logic gates, while RRAM relies on the motion of ionic species, which requires a relatively large local electric field and temperature, caused by Joule heating, for their hopping migration 19 .”
BackgroundSelf-citationKim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00697 · Cited by 603
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
Wang, W., Wang, M., Ambrosi, E., Bricalli, A., Laudato, M., Sun, Z., Chen, X., & Ielmini, D. (2019) · Nature Communications · doi:10.1038/s41467-018-07979-0 · Cited by 328
Self-citationAmbrogio, S., Balatti, S., Milo, V., Carboni, R., Wang, Z.-Q., Calderoni, A., Ramaswamy, N., & Ielmini, D. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2526647 · Cited by 256
Self-citationMicroscopic Modeling of HfOx RRAM Operations: From Forming to Switching
Padovani, A., Larcher, L., Pirrotta, O., Vandelli, L., & Bersuker, G. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2418114 · Cited by 219
Metadata
- Authors
- Ielmini, D.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2011-12
- Volume
- 58
- Issue
- 12
- Pages
- 4309-4317
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2129871911
- Cited by
- 551
- References
- 4
- FWCI
- 21.61
- Type
- journal article
- Language
- en
- Open access
- closed
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