The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Phase-Change Memory—Towards a Storage-Class Memory
Abstract
Phase-change memory (PCM) has undergone significant academic and industrial research in the last 15 years. After much development, it is now poised to enter the market as a storage-class memory (SCM), with performance and cost between that of NAND flash and DRAM. In this paper, we review the history of phase-transforming chalcogenides leading up to our current understanding of PCM as either a storage-type SCM, with high-density and better than NAND flash endurance, write speeds, and retention, or a memory-type SCM, with fast read/write times to function as a nonvolatile DRAM. Several of the key findings from the community relating to device dimensional scaling, cell design, thermal engineering, material exploration, and storing multiple levels per cell will be discussed. These areas have dramatically impacted the course of development and understanding of PCM. We will highlight the performance gains attained and the future prospects, which will help drive PCM to be as ubiquitous as NAND flash in the upcoming decade.
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Cites
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
Kuzum, D., Jeyasingh, R. G. D., Lee, B., & Wong, H.-S. P. (2012) · Nano Letters · doi:10.1021/nl201040y · Cited by 1,267 · cited 2×
“phic computing, which can use the multiple resistance states to store weights for a neural network [21]–[24], but they are”
BackgroundSelf-citationBurr, G. W., Shelby, R. M., Sidler, S., di Nolfo, C., Jang, J., Boybat, I., Shenoy, R. S., Narayanan, P., Virwani, K., Giacometti, E. U., et al. (2015) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2015.2439635 · Cited by 936
Electrical phenomena in amorphous oxide films
Dearnaley, G., Stoneham, A. M., & Morgan, D. V. (1970) · Reports on Progress in Physics · doi:10.1088/0034-4885/33/3/306 · Cited by 731
Recent Progress in Phase-ChangeMemory Technology
Burr, G. W., BrightSky, M. J., Sebastian, A., Cheng, H.-Y., Wu, J.-Y., Kim, S., Sosa, N. E., Papandreou, N., Lung, H.-L., Pozidis, H., et al. (2016) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2016.2547718 · Cited by 393
A collective relaxation model for resistance drift in phase change memory cells
Sebastian, A., Krebs, D., Le Gallo, M., Pozidis, H., & Eleftheriou, E. (2015) · 2015 IEEE International Reliability Physics Symposium · doi:10.1109/irps.2015.7112808 · Cited by 36
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An overview of phase-change memory device physics
Le Gallo, M., & Sebastian, A. (2020) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/ab7794 · Cited by 460
Colloidal quantum dot electronics
Liu, M., Yazdani, N., Yarema, M., Jansen, M., Wood, V., & Sargent, E. H. (2021) · Nature Electronics · doi:10.1038/s41928-021-00632-7 · Cited by 448
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
Zhang, Y., Wang, Z., Zhu, J., Yang, Y., Rao, M., Song, W., Zhuo, Y., Zhang, X., Cui, M., Shen, L., et al. (2020) · Applied Physics Reviews · doi:10.1063/1.5124027 · Cited by 384
Neuro-inspired electronic skin for robots
Liu, F., Deswal, S., Christou, A., Sandamirskaya, Y., Kaboli, M., & Dahiya, R. (2022) · Science Robotics · doi:10.1126/scirobotics.abl7344 · Cited by 300
Wurtzite and fluorite ferroelectric materials for electronic memory
Kim, K.-H., Karpov, I., Olsson, R. H., & Jariwala, D. (2023) · Nature Nanotechnology · doi:10.1038/s41565-023-01361-y · Cited by 283
Metadata
- Authors
- Fong, S. W., Neumann, C. M., & Wong, H.-S. P.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2017-11
- Volume
- 64
- Issue
- 11
- Pages
- 4374-4385
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2757797997
- Cited by
- 439
- References
- 5
- FWCI
- 12.99
- Type
- journal article
- Language
- en
- Open access
- closed
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- Fong, S. W., Neumann, C. M., & Wong, H.-S. P. (2017). Phase-Change Memory—Towards a Storage-Class Memory. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2017.2746342
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