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Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters

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Dupont, Laurent, Avenas, Yvan, Jeannin, Pierre-Olivier·2013·IEEE Transactions on Industry Applications

Abstract

The measurement of the junction temperature with thermosensitive electrical parameters (TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature value is generally not verified by any referential information of the actual chip temperature distribution. In this paper, we propose to use infrared (IR) measurements in order to evaluate the relevance of three commonly used TSEPs with insulated gate bipolar transistor chips: the saturation voltage under a low current, the gate-emitter voltage, and the saturation current. TheIR measurements are presented in detail with an estimation of the emissivity of the black paint deposited on the power module. The temperatures obtained with IR measurements and with the different TSEPs are then compared in two cases: the use of only one chip and the use of two paralleled chips.

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Metadata

Authors
Dupont, L., Avenas, Y., & Jeannin, P.-O.
Venue
IEEE Transactions on Industry Applications
Published
2013-07
Volume
49
Issue
4
Pages
1599-1608
ISSN
  • 0093-9994 (ISSN-L)
  • 1939-9367
OpenAlex
W2042575274
Cited by
231
References
0
FWCI
5.79
Type
journal article
Language
en
Open access
green

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Dupont, L., Avenas, Y., & Jeannin, P.-O. (2013). Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters. IEEE Transactions on Industry Applications. https://doi.org/10.1109/tia.2013.2255852

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