The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review
Abstract
This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.
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Citations
Cites
Temperature measurements of semiconductor devices - a review
Blackburn, D. L. (2004) · Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) · doi:10.1109/stherm.2004.1291304 · Cited by 319
Dupont, L., Avenas, Y., & Jeannin, P.-O. (2013) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2013.2255852 · Cited by 231
Self-citationReal-Time Compact Thermal Models for Health Management of Power Electronics
Musallam, M., & Johnson, C. M. (2010) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2010.2040634 · Cited by 196
Transient Electrothermal Simulation of Power Semiconductor Devices
Du, B., Hudgins, J. L., Santi, E., Bryant, A. T., Palmer, P., & Mantooth, H. A. (2009) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2009.2029105 · Cited by 162
Evaluation of the switching characteristics of a gallium-nitride transistor
Danilovic, M., Chen, Z., Wang, R., Luo, F. L., Boroyevich, D., & Mattavelli, P. (2011) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2011.6064128 · Cited by 150
Kühn, H., & Mertens, A. (2009) · European Conference on Power Electronics and Applications · Cited by 127
On-line estimation of IGBT junction temperature using on-state voltage drop
Kim, Y.-S., & Sul, S. (1998) · Conference record · doi:10.1109/ias.1998.730245 · Cited by 117
Transient temperature measurements and modeling of IGBT's under short circuit
Ammous, A., Allard, B., & Morel, H. (1998) · IEEE Transactions on Power Electronics · doi:10.1109/63.654955 · Cited by 116
Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter
Brckner, T., & Bernet, S. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2006.886651 · Cited by 112
Perpiñà, X., Servière, J. F., Saiz, J., Barlini, D., Mermet-Guyennet, M., & Millán, J. (2006) · Microelectronics Reliability · doi:10.1016/j.microrel.2006.07.078 · Cited by 104
Cited by
Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics
Wang, H., Liserre, M., Blaabjerg, F., de Place Rimmen, P., Jacobsen, J. B., Kvisgaard, T., & Landkildehus, J. (2014) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2013.2290282 · Cited by 693
Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
Advanced Accelerated Power Cycling Test for Reliability Investigation of Power Device Modules
Choi, U.-M., Joergensen, S., & Blaabjerg, F. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2521899 · Cited by 200
Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs
Griffo, A., Wang, J., Colombage, K., & Kamel, T. (2018) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2739687 · Cited by 175
Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling
Ugur, E., Yang, F., Pu, S., Zhao, S., & Akin, B. (2019) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2019.2891214 · Cited by 159
Metadata
- Authors
- Avenas, Y., Dupont, L., & Khatir, Z.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2012-06
- Volume
- 27
- Issue
- 6
- Pages
- 3081-3092
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2026012753
- Cited by
- 559
- References
- 29
- FWCI
- 8.02
- Type
- journal article
- Language
- en
- Open access
- closed
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- Avenas, Y., Dupont, L., & Khatir, Z. (2012). Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2011.2178433
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