SiC MOSFETs robustness for diode-less applications
Open accessAbstract
Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
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The CMB test accelerates internal PiN diode degradation by body diode conduction.
“The chopper mode bias (CMB) test accelerates the internal PiN diode degradation by body diode conduction [62], [63].”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [62]
Section 3.3 describes CMB testing that forces current through the intrinsic diode to assess possible P–N junction degradation. But section 4.2 reports that the diode’s forward voltage remained constant, suggesting no noticeable P–N junction degradation; the observed degradation was in threshold voltage instead. (LLM, conf=0.89)
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Sorted by citations
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
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AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
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“The chopper mode bias (CMB) test accelerates the internal PiN diode degradation by body diode conduction [62], [63].”
- Authors
- Avino-Salvado, O., Cheng, C., Buttay, C., Morel, H., Labrousse, D., Lefebvre, S., & Ali, M.
- Affiliations
- Univ Lyon, INSA-Lyon, CNRS, Laboratoire Ampère UMR 5005, Villeurbanne, France.
- Centre National de la Recherche Scientifique (FR)
- Corresponding author
- Morel, H.
- Venue
- EPE Journal
- Publisher
- Informa UK Limited
- Published
- 2018-04-02
- Volume
- 28
- Issue
- 3
- Pages
- 128-135
- ISSN
- 0939-8368 (ISSN-L)
- 2376-9319
- OpenAlex
- W2795449139
- Cited by
- 17
- References
- 26
- Citations by year
- 2025: 2 · 2024: 3 · 2023: 3 · 2022: 1 · 2021: 2 · 2020: 1 · 2019: 2 · 2018: 3
- FWCI
- 0.77
- Type
- journal article
- Language
- en
- Open access
- green
- hal.science
- Licence
- other-oa
- Locations
- EPE Journal (publishedVersion)
- HAL (submittedVersion, other-oa)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Keywords
- SiC MOSFET, silicon carbide power devices, gate oxide degradation, threshold voltage shift, inductive switching, device reliability
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