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Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS

Hu, Ji, Alatise, Olawiwola, Ortiz Gonzalez, Jose Angel, Bonyadi, Roozbeh, Alexakis, Petros, Ran, Li, Mawby, Philip·2016·IEEE Transactions on Industrial Electronics

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  22. qiang, 0, A 10 kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies, Proc 27th IEEE Int Symp Power Semicond Dev IC’s (ISPSD), 349
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Metadata

Authors
Hu, J., Alatise, O., Ortiz Gonzalez, J. A., Bonyadi, R., Alexakis, P., Ran, L., & Mawby, P.
ORCID
Hu, Ji
Venue
IEEE Transactions on Industrial Electronics
Published
2016-04
Volume
63
Issue
4
Pages
2092-2102
ISSN
  • 0278-0046
  • 1557-9948
Cited by
67
References
0
Funders
  • U.K. Engineering and Physical Sciences Research Council
  • Underpinning Power Electronics Devices Theme (EP/L007010/1)
  • Components Theme (EP/K034804/1)
  • grant reference (EP/K008161/1)

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CoChat. (2026). Citation check: Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. https://app.cochat.ai/papers/10.1109/tie.2015.2500187
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Hu, J., Alatise, O., Ortiz Gonzalez, J. A., Bonyadi, R., Alexakis, P., Ran, L., & Mawby, P. (2016). Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2015.2500187

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.