The DOI matches its Crossref record.
Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“although the paralleling of transistors is an object of significant research [40][41][42][43][44], the application of this topology in the self-resonance architectures requires additional investigation.”
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 34
- 10.1109/TPEL.2015.2388512 · DOI
- 10.1007/978-0-387-47314-7 · DOI
- 10.1109/TED.2014.2323152 · DOI
- 10.1109/TED.2012.2226177 · DOI
- 10.1109/PESC.1988.18196 · DOI
- 10.1109/TPEL.2014.2318991 · DOI
- 10.1109/TIE.2012.2196894 · DOI · Paper page
- 10.1109/TDMR.2010.2102026 · DOI
- ui-min, 2015, Study and handling methods of power IGBT module failures in power electronic converter systems, IEEE Trans Power Electron, 30, 2517, 10.1109/TPEL.2014.2373390 · DOI
- 10.1109/TIE.2015.2491880 · DOI
- 10.1109/TIE.2010.2077613 · DOI
- nan, 2015, Dynamic characterization of parallel-connected high-power IGBT modules, IEEE Trans Ind Appl, 51, 539, 10.1109/TIA.2014.2330075 · DOI · Paper page
- zhiqiang, 2016, Temperature-dependent short-circuit capability of silicon carbide power MOSFETs, IEEE Trans Power Electron, 31, 1555, 10.1109/TPEL.2015.2416358 · DOI
- thanh-that, 2015, Gate oxide reliability issues of SiC MOSFETs under short-circuit operation, IEEE Trans Power Electron, 30, 2445, 10.1109/TPEL.2014.2353417 · DOI
- zhuxian, 2015, Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation, IEEE Trans Ind Electron, 62, 3419
- 10.1109/TIE.2014.2347914 · DOI
- 10.1109/TPEL.2013.2287382 · DOI
- 10.1109/IECON.2008.4758036 · DOI
- 10.1109/EPE.2013.6634432 · DOI
- 10.1109/TPEL.2011.2108670 · DOI
- 10.1109/IECON.2008.4758013 · DOI
- qiang, 0, A 10 kV/200A SiC MOSFET module with series-parallel hybrid connection of 1200V/50A dies, Proc 27th IEEE Int Symp Power Semicond Dev IC’s (ISPSD), 349
- 10.1109/TIE.2011.2114313 · DOI · Paper page
- 10.1109/TIE.2011.2162213 · DOI
- 10.1109/IPEC.2014.6870032 · DOI
- hyunseok, 2015, Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review, IEEE Trans Power Electron, 30, 2413, 10.1109/TPEL.2014.2346485 · DOI
- 10.1109/TIA.2011.2181290 · DOI
- yang, 0, Active current balancing for parallel-connected silicon carbide MOSFETs, Proc IEEE Energy Conversion Congr Expo (ECCE), 1563
- 10.1109/16.502137 · DOI
- 10.1109/TED.2010.2049062 · DOI
- 10.1109/APEC.1992.228375 · DOI
- 10.1109/16.568052 · DOI
- 10.1109/16.902737 · DOI
- 10.1109/16.998603 · DOI
Cited by
Review of Silicon Carbide Power Devices and Their Applications
She, X., Huang, A. Q., Lucia, O., & Ozpineci, B. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2652401 · Cited by 1,773
Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions
Li, H., Zhao, S., Wang, X., Ding, L., & Mantooth, H. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3278270 · Cited by 135
Dimitrov, B., Hayatleh, K., Barker, S., & Collier, G. (2021) · Electricity · doi:10.3390/electricity2040026 · Cited by 3
Metadata
- Authors
- Hu, J., Alatise, O., Ortiz Gonzalez, J. A., Bonyadi, R., Alexakis, P., Ran, L., & Mawby, P.
- ORCID
- Hu, Ji
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2016-04
- Volume
- 63
- Issue
- 4
- Pages
- 2092-2102
- ISSN
- 0278-0046
- 1557-9948
- Cited by
- 67
- References
- 0
- Funders
- U.K. Engineering and Physical Sciences Research Council
- Underpinning Power Electronics Devices Theme (EP/L007010/1)
- Components Theme (EP/K034804/1)
- grant reference (EP/K008161/1)
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. https://app.cochat.ai/papers/10.1109/tie.2015.2500187
- The paper
- Hu, J., Alatise, O., Ortiz Gonzalez, J. A., Bonyadi, R., Alexakis, P., Ran, L., & Mawby, P. (2016). Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2015.2500187
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.