The DOI matches its Crossref record; 25 of the 26 references it cites were found in a registry or an index.
High-Efficiency High-Density Critical Mode Rectifier/Inverter for WBG-Device-Based On-Board Charger
Open accessAbstract
A widebandgap-based bidirectional on-board charger (OBC) has been proposed with a variable dc-link voltage, which tracks the battery voltage fluctuation. Although this approach is deemed most efficient for the resonant dc/dc stage, it posts significant challenges for the rectifier/inverter stage, which operates in the critical mode to realize zero-voltage switching (ZVS), while subjecting to the large variations of input and output voltages. Design considerations of the ac/dc stage are presented in this paper, including: the evaluation of 1.2-kV SiC MOSFETs; the ZVS extension techniques to realize ZVS under all input/output variations; and a novel universal control strategy for both the rectifier mode and the inverter mode. A prototype is built which achieves 98.5% efficiency at a switching frequency higher than 300 kHz. Furthermore, a 6.6-kW OBC system is demonstrated, using both SiC and GaN devices with 37-W/in3power density and above 96% efficiency.
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“The application of WBG devices has resulted in enhanced power density and efficiency.At the same time, it also lowers the size and overall price [124].”
From On-Board Chargers for Electric Vehicles: A Comprehensive Performance and Efficiency Review (2024) · cites this paper as [124]
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Cites
Yilmaz, M., & Krein, P. T. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2212917 · Cited by 3,118
Whitaker, B., Barkley, A., Cole, Z., Passmore, B., Martin, D., McNutt, T. R., Lostetter, A. B., Lee, J. S., & Shiozaki, K. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2279950 · Cited by 442
Evaluation and Application of 600 V GaN HEMT in Cascode Structure
Huang, X., Liu, Z., Li, Q., & Lee, F. C. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2276127 · Cited by 415
Liu, Z., Huang, X., Lee, F. C., & Li, Q. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2264941 · Cited by 295
Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration
Huang, X., Li, Q., Liu, Z., & Lee, F. C. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2267804 · Cited by 294
Zhou, X., Xu, P., & Lee, F. C. (2000) · IEEE Transactions on Power Electronics · doi:10.1109/63.892830 · Cited by 243
An automotive on-board 3.3 kW battery charger for PHEV application
Gautam, D. S., Musavi, F., Edington, M., Eberle, W., & Dunford, W. G. (2011) · IEEE Vehicle Power and Propulsion Conference (VPPC) · doi:10.1109/vppc.2011.6043192 · Cited by 132
Hybrid ZVS BCM Current Controlled Three-Phase Microinverter
Amirahmadi, A., Hu, H., Grishina, A., Zhang, Q., Chen, L., Somani, U., & Batarseh, I. E. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2271302 · Cited by 94
Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter
Liu, Z., Huang, X., Mu, M., Yang, Y., Lee, F. C., & Li, Q. (2014) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2014.6953451 · Cited by 88
High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs
DiMarino, C., Chen, Z., Danilovic, M., Boroyevich, D., Burgos, R. P., & Mattavelli, P. (2013) · IEEE Energy Conversion Congress and Exposition (ECCE) · doi:10.1109/ecce.2013.6647125 · Cited by 73
Research works printed but not linked: 3
- 2015, Chevy Volt Lear 3 3kW High Voltage Charger
- 2015, BRUSA NLG513 Water
- 2015, SiC MOSFET Isolated Gate Driver
Cited by
Sorted by citations
Chakraborty, S., Vu, H. N., Hasan, M. M., Tran, D.-D., Baghdadi, M. E., & Hegazy, O. (2019) · Energies · doi:10.3390/en12081569 · Cited by 417
A Review of Bidirectional On-Board Chargers for Electric Vehicles
Yuan, J., Dorn-Gomba, L., Callegaro, A. D., Reimers, J., & Emadi, A. (2021) · IEEE Access · doi:10.1109/access.2021.3069448 · Cited by 390
“6kW OBC, which uses 650V GaN and 1200V SiC devices [79], [80].”
MethodBidirectional Onboard Chargers for Electric Vehicles: State-of-the-Art and Future Trends
Wouters, H., & Martinez, W. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3319996 · Cited by 280
Belkamel, H., Kim, H., & Choi, S. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3016684 · Cited by 170
Revolution of Electric Vehicle Charging Technologies Accelerated by Wide Bandgap Devices
Li, S., Lu, S., & Mi, C. C. (2021) · Proceedings of the IEEE · doi:10.1109/jproc.2021.3071977 · Cited by 171
Metadata
- Authors
- Liu, Z., Li, B., Lee, F. C., & Li, Q.
- Affiliations
- Virginia Tech (US)
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2017-11
- Volume
- 64
- Issue
- 11
- Pages
- 9114-9123
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W2626008819
- Cited by
- 221
- References
- 26
- Citations by year
- 2026: 15 · 2025: 21 · 2024: 27 · 2023: 26 · 2022: 27 · 2021: 30 · 2020: 23 · 2019: 25 · 2018: 25 · 2017: 2
- FWCI
- 8.53
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Licence
- Locations
- IEEE Transactions on Industrial Electronics (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- U.S. Department of Energy
- Office of Energy Efficiency and Renewable Energy
- High-Efficiency High-Density GaN-Based 6.6-kW Bidirectional on-Board Charger for PEVs
- Delta Products Corp (DE-EE0006834)
- Power Management Consortium with the Center for Power Electronics Systems
- Virginia Polytechnic Institute and State University
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Wireless Power Transfer Systems
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Keywords
- on-board charger, bidirectional DC-DC converter, zero-voltage switching, SiC MOSFET, GaN devices, variable DC-link voltage, high power density, high switching frequency
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