Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs
Abstract
This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) MOSFETs devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-on transient characteristic (di/dt), the on-state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the on-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for di/dt. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.
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Switching parameters such as turn-on delay time, turn-on di/dt, turn-off delay time, and turn-off di/dt are presented in the literature for junction temperature measurement of SiC MOSFETs.
“The switching parameters like turnon delay time [90]-[92], turn-on di/dt [83], [93]-[95], turn-off delay time [70], [96], [97], and turn-off di/dt [95], are presented in the literature for junction temperature measurement of SiC MOSFETs.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
Section II (pp. 4–5) examines turn-on current di/dt as a temperature-sensitive parameter in SiC MOSFETs, while cautioning that its temperature sensitivity can be very low. The cited paper does not present turn-on delay time, turn-off delay time, or turn-off di/dt as junction-temperature measurement parameters, so it supports only one of the four listed examples. (LLM, conf=0.86)
Experimental — accuracy not yet measuredIn [83], parasitic impedance between the Kelvin source and power source pins is used to measure threshold voltage, which is suitable only for 4-pin devices.
“In [83], the parasitic impedance between the kelvin source and power source pins is used to measure the threshold voltage, which is suitable only for 4-pin devices.”
From AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters (2023) · cites this paper as [83]
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- Authors
- Griffo, A., Wang, J., Colombage, K., & Kamel, T.
- Affiliations
- University of Sheffield (GB)
- Malvern Instruments, Ltd., Malvern, U.K.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2018-03
- Volume
- 65
- Issue
- 3
- Pages
- 2663-2671
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W2747182495
- Cited by
- 175
- References
- 33
- Citations by year
- 2026: 10 · 2025: 27 · 2024: 27 · 2023: 19 · 2022: 17 · 2021: 33 · 2020: 20 · 2019: 16 · 2018: 6
- FWCI
- 4.78
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Industrial Electronics (publishedVersion)
- White Rose Research Online (University of Leeds, The University of Sheffield, University of York) (acceptedVersion)
- Funders
- European Commission Horizon 2020 – Mobility for Growth Program (636170)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, junction temperature estimation, temperature-sensitive electrical parameters, online condition monitoring, threshold voltage, turn-on transient, on-state voltage
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