The DOI matches its Crossref record.
Comparative analysis of dielectric- modulated FET and TFET-based biosensor
Abstract
An extensive study is presented to describe the impact of partial hybridization on the device electrostatics and on current of a silicon dielectric-modulated tunnel field effect transistor (DM-TFET). To gain insight into the various design considerations and factors influencing the sensitivity, both process-related issue such as cavity length variation and real-time issues related to biomolecules behavior such as partial hybridization, charge, and position of receptors/target molecules have been investigated through extensive numerical simulations. The results indicate that TFET-based sensor does not suffer from scaling issues and thus can help in miniaturization without compromising the sensitivity, unlike a nanogap-embedded DM-FET.
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TFET-based biosensors are more sensitive for different biomolecules than traditional MOSFET biosensors due to differences in current injection mechanisms.
“As we can see from Fig. 16, the traditional MOSFET biosensor shows the lowest sensitivity and TFET based biosensors are more sensitive for the different biomolecules due to the difference in current injection mechanisms [41].”
From A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application (2021) · cites this paper as [41]
Traditional MOSFET biosensors show the lowest sensitivity.
“As we can see from Fig. 16, the traditional MOSFET biosensor shows the lowest sensitivity and TFET based biosensors are more sensitive for the different biomolecules due to the difference in current injection mechanisms [41].”
From A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application (2021) · cites this paper as [41]
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Research works printed but not linked: 13
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Cited by
Sorted by citations
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
Verma, M., Tirkey, S., Yadav, S., Sharma, D., & Yadav, D. S. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2732820 · Cited by 276
A Vertically Stacked Nanosheet Gate-All-Around FET for Biosensing Application
Li, C., Liu, F., Han, R., & Zhuang, Y. (2021) · IEEE Access · doi:10.1109/access.2021.3074906 · Cited by 60
Metadata
- Authors
- Narang, R., Saxena, M., & Gupta, M.
- Affiliations
- University of Delhi (IN)
- Venue
- IEEE Transactions on Nanotechnology
- Published
- 2015-05
- Volume
- 14
- Issue
- 3
- Pages
- 427-435
- ISSN
- 1536-125X (ISSN-L)
- 1941-0085
- OpenAlex
- W2129487886
- Cited by
- 296
- References
- 0
- Citations by year
- 2026: 25 · 2025: 39 · 2024: 55 · 2023: 44 · 2022: 50 · 2021: 31 · 2020: 25 · 2019: 8 · 2018: 7 · 2017: 7 · 2016: 4 · 2015: 1
- FWCI
- 2.95
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Nanotechnology (publishedVersion)
- Funders
- Ministry of Science and Technology
- Department of Science and Technology
- Government of India
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Life Sciences › Biochemistry, Genetics and Molecular Biology › Molecular Biology › Advanced biosensing and bioanalysis techniques
- Physical Sciences › Chemistry › Analytical Chemistry › Analytical Chemistry and Sensors
- Keywords
- tunnel field-effect transistor, biosensors, DNA hybridization, cavity length variation, sensor sensitivity, device miniaturization
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Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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