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An assessment of wide bandgap semiconductors for power devices
Abstract
An advantage for some wide bandgap materials, that is often overlooked, is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for packaging technology. It is shown that the optimal choice for uni-polar devices is clearly GaN. It is further shown that the future optimal choice for bipolar devices is C (diamond) owing to the large bandgap, high thermal conductivity, and large electron and hole mobilities. A new expression relating the critical electric field for breakdown in abrupt junctions to the material bandgap energy is derived and is further used to derive new expressions for specific on-resistance in power semiconductor devices. These new expressions are compared to the previous literature and the efficacy of specific power devices, such as heterojunction MOSFETs, using GaN are discussed.
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Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Self-citationGaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Pearton, S. J., Ren, F., Tadjer, M., & Kim, J. (2018) · Journal of Applied Physics · doi:10.1063/1.5062841 · Cited by 659
Khaligh, A., & Dusmez, S. (2012) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2012.2213104 · Cited by 630
Die Attach Materials for High Temperature Applications: A Review
Manikam, V. R., & Cheong, K. Y. (2011) · IEEE Transactions on Components, Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2010.2100432 · Cited by 478
Metadata
- Authors
- Hudgins, J. L., Simin, G. S., Santi, E., & Khan, M. A.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2003-05
- Volume
- 18
- Issue
- 3
- Pages
- 907-914
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2119418964
- Cited by
- 610
- References
- 0
- FWCI
- 7.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- Hudgins, J. L., Simin, G. S., Santi, E., & Khan, M. A. (2003). An assessment of wide bandgap semiconductors for power devices. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2003.810840
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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