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Datasheet Driven Silicon Carbide Power MOSFET Model
Abstract
A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.
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Cited by
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
Mantooth, H. A., Glover, M. D., & Shepherd, P. (2014) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2014.2313511 · Cited by 264
Self-citationOverview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
Ni, Z., Lyu, X., Yadav, O. P., Singh, B. N., Zheng, S., & Cao, D. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2962503 · Cited by 261
Zeng, Z., Zhang, X., & Zhang, Z. (2020) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2019.2901655 · Cited by 161
Farhadi, M., Yang, F., Pu, S., Vankayalapati, B. T., & Akin, B. (2021) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3049394 · Cited by 93
Xu, Y., Ho, C. N. M., Ghosh, A., & Muthumuni, D. (2021) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2021.3058227 · Cited by 29
Metadata
- Authors
- Mudholkar, M., Ahmed, S., Ericson, M. N., Frank, S. S., Britton, C. L., & Mantooth, H. A.
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2014-05
- Volume
- 29
- Issue
- 5
- Pages
- 2220-2228
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2166315761
- Cited by
- 175
- References
- 0
- FWCI
- 9.55
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mudholkar, M., Ahmed, S., Ericson, M. N., Frank, S. S., Britton, C. L., & Mantooth, H. A. (2014). Datasheet Driven Silicon Carbide Power MOSFET Model. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2013.2295774
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