The DOI matches its Crossref record; 37 of the 37 references it cites were found in a registry or an index.
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
Abstract
The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.
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Cites
Casady, J. B., & Johnson, R. W. (1996) · Solid-State Electronics · doi:10.1016/0038-1101(96)00045-7 · Cited by 1,445
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
Bhatnagar, M., & Baliga, B. J. (1993) · IEEE Transactions on Electron Devices · doi:10.1109/16.199372 · Cited by 1,120
Power semiconductor device figure of merit for high-frequency applications
Baliga, B. J. (1989) · IEEE Electron Device Letters · doi:10.1109/55.43098 · Cited by 1,070
High-temperature electronics - a role for wide bandgap semiconductors?
Neudeck, P. G., Okojie, R. S., & Chen, L.-Y. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021571 · Cited by 1,050
GaN Power Transistors on Si Substrates for Switching Applications
Ikeda, N., Niiyama, Y., Kambayashi, H., Sato, Y., Nomura, T., Kato, S., & Yoshida, S. (2010) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2034397 · Cited by 525
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
Funaki, T., Balda, J. C., Junghans, J., Kashyap, A. S., Mantooth, H. A., Barlow, F., Kimoto, T., & Hikihara, T. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.900561 · Cited by 333
Self-citationSilicon Carbide Power MOSFET Model and Parameter Extraction Sequence
McNutt, T. R., Hefner, A. R., Mantooth, H. A., Berning, D., & Ryu, S.-H. (2007) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2006.889890 · Cited by 256
Self-citationImpact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles
Zhang, H., Tolbert, L. M., & Ozpineci, B. (2011) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2010.2102734 · Cited by 255
Zhang, H., & Tolbert, L. M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2048292 · Cited by 200
Datasheet Driven Silicon Carbide Power MOSFET Model
Mudholkar, M., Ahmed, S., Ericson, M. N., Frank, S. S., Britton, C. L., & Mantooth, H. A. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2295774 · Cited by 175
Self-citation
Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Global Trends in High-Power On-Board Chargers for Electric Vehicles
Khaligh, A., & D'Antonio, M. (2019) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2019.2897050 · Cited by 652
Making the Case for Electrified Transportation
Bilgin, B., Magne, P., Malysz, P., Yang, Y., Pantelic, V., Preindl, M., Korobkine, A., Jiang, W., Lawford, M., & Emadi, A. (2015) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2015.2437338 · Cited by 455
Zhao, C., Wang, L., & Zhang, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2954716 · Cited by 146
Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules
Luo, H., Iannuzzo, F., & Turnaturi, M. (2020) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2894717 · Cited by 82
Metadata
- Authors
- Mantooth, H. A., Glover, M. D., & Shepherd, P.
- Venue
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Published
- 2014-09
- Volume
- 2
- Issue
- 3
- Pages
- 374-385
- ISSN
- 2168-6777 (ISSN-L)
- 2168-6785
- OpenAlex
- W2314592649
- Cited by
- 264
- References
- 37
- FWCI
- 12.38
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mantooth, H. A., Glover, M. D., & Shepherd, P. (2014). Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems. IEEE Journal of Emerging and Selected Topics in Power Electronics. https://doi.org/10.1109/jestpe.2014.2313511
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
