Student or educator? Sign up with your school email and get 6 months of Pro free.
CoChat
Sign Up
Cited by 144

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

Wen, Yang, Yang, Yuan, Gao, Yong·2021·IEEE Transactions on Power Electronics
DOI 10.1109/tpel.2020.3006071
Open this paper in CoChat — free account

Abstract

Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution. Due to the limited current capability of a single module, more modules parallel-connected are necessary for higher power application. However, current sharing is the key obstacle. In this article, an active gate driver (AGD) for high-power SiC MOSFETs is presented to balance the currents of parallel-connected SiC MOSFET modules. The principle of the AGD is based on dynamic gate drive voltage adjustment to synchronize current edges and current slopes among parallel-connected SiC MOSFET modules automatically. Each AGD measures and controls the current of its SiC MOSFET module individually. No extra supervising control circuit is needed. In addition, the hardware and software configurations are independent of the system design and no restrictions on the number of SiC MOSFET modules connected in parallel exist. Finally, the switching performance of the AGD was experimentally verified on two parallel-connected SiC MOSFET modules in a multipulse test under constant and variable load currents. In addition, the effectiveness of AGD under different control topologies has been studied with simulation and verified using three parallel-connected SiC MOSFET modules.

Overview

Integrity signals

Registry

Crossref · 10.1109/tpel.2020.3006071

Cites

1 of 1 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

Show all 1 references

Research works printed but not linked: 33

  1. 10.1109/ISPSD.2013.6694398 · DOI · Paper page
  2. 10.1109/TPS.2008.2003971 · DOI · Paper page
  3. 10.1109/APEC.2014.6803501 · DOI · Paper page
  4. 10.1109/TPEL.2018.2878779 · DOI
  5. lobsiger, 2011, Decentralized active gate control for current balancing of parallel connected IGBT modules, Proc Eur Conf Power Electron Appl, 1
  6. 10.1109/ITEC-AP.2018.8433284 · DOI
  7. 10.1109/APEC.2013.6520216 · DOI · Paper page
  8. 10.1109/TPEL.2018.2797326 · DOI
  9. 10.1109/JESTPE.2019.2939644 · DOI
  10. 10.1109/TPEL.2018.2827989 · DOI
  11. 10.1109/PECI.2018.8334986 · DOI
  12. 10.1109/TDMR.2019.2949449 · DOI
  13. 10.1109/TPEL.2019.2934739 · DOI
  14. 10.1049/iet-pel.2018.5418 · DOI
  15. 10.1109/JESTPE.2017.2720731 · DOI
  16. 10.1109/TPEL.2016.2562030 · DOI
  17. 10.1109/TPEL.2017.2655496 · DOI
  18. 10.1109/TPEL.2019.2952326 · DOI
  19. 10.1109/TPEL.2017.2716370 · DOI
  20. 10.1109/JESTPE.2019.2924735 · DOI
  21. 10.1109/TPEL.2019.2954716 · DOI · Paper page
  22. 10.1109/TIE.2017.2719603 · DOI
  23. 10.1049/iet-cds.2017.0255 · DOI
  24. 10.1109/TCPMT.2016.2637906 · DOI
  25. fabre, 2016, Parallel connection of 1200-V/100-A SiC-MOSFET half-bridge modules, IEEE Trans Ind Appl, 52, 1669
  26. 10.1109/TPEL.2018.2809923 · DOI
  27. 10.1109/TPEL.2018.2834345 · DOI
  28. 10.1049/joe.2018.8103 · DOI
  29. 10.1109/JESTPE.2018.2870248 · DOI
  30. 10.1109/TIE.2017.2716868 · DOI
  31. 10.1109/TPEL.2016.2646323 · DOI
  32. 10.1109/TPEL.2016.2553133 · DOI
  33. 10.1109/TIE.2019.2901655 · DOI · Paper page

Cited by

See all 144

Metadata

Authors
Wen, Y., Yang, Y., & Gao, Y.
Venue
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2021-02
Volume
36
Issue
2
Pages
1491-1505
ISSN
  • 0885-8993
  • 1941-0107
DOI
10.1109/tpel.2020.3006071
Cited by
144
References
1
Licence
Funders
  • National Natural Science Foundation of China (51477138)
  • Key Research and Development Program of Shaanxi in Shaanxi, China (2017ZDXM-GY-130)

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules. https://app.cochat.ai/papers/10.1109/tpel.2020.3006071
The paper
Wen, Y., Yang, Y., & Gao, Y. (2021). Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2020.3006071

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.