The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Pressureless Sintered-Silver Die-Attach at 180 °C for Power Electronics Packaging
Abstract
Die attachment by pressureless silver sintering at <; 200 °C is significant for power electronic packaging because it can relieve residual thermo-mechanical stress and avoid chip damage. In this letter, we developed a trimodal-silver paste capable of pressureless sintering at as low as 180 °C due to the usage of trimodal-system and 170 °C removable organics agents. The bondline could be densified by neck-formation as expected. Thanks to the high packing density of the trimodal system, a high bonding strength of 35 MPa was achieved. Moreover, IGBT modules were demonstrated using the 180 °C sinterable sintered-Ag die attachment. The output I-V characteristics and the thermal resistance of the IGBT modules were discussed.
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“Silver-sintered joints provide excellent electrical/thermal conductivity and high-temperature stability but face electromigration (EM) and cost challenges [2,30-35].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [34]
Citations
Cites
Metal–metal bonding process using Ag metallo-organic nanoparticles
Ide, E., Angata, S., Hirose, A., et al. (2005) · Acta Materialia · doi:10.1016/j.actamat.2005.01.047 · Cited by 502
Survey of High-Temperature Reliability of Power Electronics Packaging Components
Khazaka, R., Mendizabal, L., Henry, D., & Hanna, R. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2357836 · Cited by 387
Sintering of Fine Oxide Powders: II, Sintering Mechanisms
Chen, P., & Chen, I. (1997) · Journal of the American Ceramic Society · doi:10.1111/j.1151-2916.1997.tb02879.x · Cited by 197
Siow, K. S., & Lin, Y. T. (2016) · Journal of Electronic Packaging · doi:10.1115/1.4033069 · Cited by 154
Reliability of Ag Sintering for Power Semiconductor Die Attach in High-Temperature Applications
Yu, F., Cui, J., Zhou, Z., et al. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2016.2631128 · Cited by 153
Dynamic Modeling Method of Electro-Thermo-Mechanical Degradation in IGBT Modules
Pedersen, K. B., & Pedersen, K. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2426013 · Cited by 99
Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
Bajwa, A. A., Qin, Y., Reiner, R. S., Quay, R., & Wilde, J. (2015) · IEEE Transactions on Components Packaging and Manufacturing Technology · doi:10.1109/tcpmt.2015.2468595 · Cited by 78
The sintering behavior of close-packed spheres
Bjørk, R., Tikare, V., Frandsen, H. L., et al. (2012) · Scripta Materialia · doi:10.1016/j.scriptamat.2012.03.024 · Cited by 31
Wang, M., Lu, G., Mei, Y., et al. (2015) · IET Power Electronics · doi:10.1049/iet-pel.2014.0120 · Cited by 28
Self-citationDie-attach on nickel substrate by pressureless sintering a trimodal silver paste
Wang, M., Mei, Y., Li, X., et al. (2019) · Materials Letters · doi:10.1016/j.matlet.2019.06.041 · Cited by 23
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Research works printed but not linked: 1
- lu, 0, Advanced die-attach by metal-powder sintering: The science and practice, in Proc 10th Int Conf Integr Power Electron Syst, 1
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Metadata
- Authors
- Wang, M., Mei, Y.-H., Jin, J., Chen, S., Li, X., & Lu, G.-Q.
- Affiliations
- Nankai University (CN)
- Tianjin University (CN)
- Virginia Tech (US)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2021-11
- Volume
- 36
- Issue
- 11
- Pages
- 12141-12145
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W3159409821
- Cited by
- 69
- References
- 14
- Citations by year
- 2026: 16 · 2025: 15 · 2024: 15 · 2023: 10 · 2022: 11 · 2021: 2
- FWCI
- 2.79
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- National Natural Science Foundation of China (51922075, U1966212, 51877147)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
- Keywords
- pressureless sintering, power electronics packaging, neck formation, bond strength, IGBT modules, thermal resistance, thermo-mechanical stress
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