The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
Static Current Balancing Strategy for Parallel IGBTs Based on Parametric Compensation
Abstract
Insulated gate bipolar transistor (IGBT) parallel connection is an effective way to solve the problem, which is the gradual increase in the capacity of the magnetic confinement power supply in a Tokamak device. Static current balance (SCB) is one of the key factors for the safe and stable operation of a parallel IGBT system. Therefore, to improve the stability of parallel IGBT systems, it is very important to study the current difference in the parallel IGBTs under various parameter differences. However, the existing results have focused mainly on device parameter matching through device screening, driving parameter matching using the active gate driving (AGD) method, or single parasitic parameter (PP) matching. These research results do not analyze the matching strategy between multiple parameters, which are the device parameter and the PP. The study showed that the collector inductance, emitter parasitic inductance, emitter parasitic resistance, collector equivalent resistance, and equivalent series voltage of the IGBTs have a significant impact on the SCB of the parallel IGBTs. When these five parameters are mismatched, there exists an equilibrium point that can reduce the static current difference (SCD) between the parallel IGBTs under the total influence of these parameter differences. Therefore, a current difference model (CDM) is created to analyze the equilibrium point of multiple parameter mismatches. The experimental results show that the multiparameter compensation scheme implemented by the CDM can effectively reduce the current difference between parallel IGBTs, which provides a feasible reference for device selection and circuit design.
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Cites
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Smet, V., Forest, F., Huselstein, J.-J., Richardeau, F., Khatir, Z., Lefebvre, S., & Berkani, M. (2011) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2011.2114313 · Cited by 620
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Li, H., Munk-Nielsen, S., Wang, X., Maheshwari, R., Beczkowski, S., Uhrenfeldt, C., & Franke, W.-T. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2408054 · Cited by 306
Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications
Wang, G., Mookken, J., Rice, J., & Schupbach, M. (2014) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2014.6803502 · Cited by 149
Zhao, C., Wang, L., & Zhang, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2954716 · Cited by 146
Bortis, D., Biela, J., & Kolar, J. W. (2008) · IEEE Transactions on Plasma Science · doi:10.1109/tps.2008.2003971 · Cited by 127
Mao, Y., Miao, Z., Wang, C., & Ngo, K. D. T. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2716868 · Cited by 111
Li, H., Zhou, W. J., Wang, X., Munk‐Nielsen, S., Li, D., Wang, Y., & Dai, X. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2797326 · Cited by 106
Zhao, C., Wang, L., Zhang, F., & Yang, F. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3009008 · Cited by 84
Moorthy, R. S. K., Aberg, B., Olimmah, M., Yang, L., Rahman, D., Lemmon, A. N., Yu, W., & Husain, I. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2952884 · Cited by 75
Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs
Borghese, A., Riccio, M., Fayyaz, A., Castellazzi, A., Maresca, L., Breglio, G., & Irace, A. (2019) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2019.2924735 · Cited by 65
Research works printed but not linked: 1
- Cao, 2023, Influence of parameter dispersion of parallel press-pack IGBT chips on, 43, 8025
Cited by
Huang, H., Peng, L., Wang, H., & Wu, X. (2025) · Fusion Science & Technology · doi:10.1080/15361055.2025.2523611
Self-citationInfluence of gate resistance and parasitic components on current sharing in parallel GaN MOSFETs
Alam, M., & Kumar, B. A. (2026) · Sadhana · doi:10.1007/s12046-026-03211-8
Metadata
- Authors
- Peng, L., Huang, H., & Wang, H.
- Affiliations
- Hefei University of Technology (CN)
- Venue
- IEEE Transactions on Plasma Science
- Published
- 2024-07
- Volume
- 52
- Issue
- 7
- Pages
- 2907-2916
- ISSN
- 0093-3813 (ISSN-L)
- 1939-9375
- OpenAlex
- W4402040341
- Semantic Scholar
- f1e5433d3062b71e473799bc48891a856a7266cf
- Cited by
- 2
- References
- 26
- Citations by year
- 2026: 1 · 2025: 1
- FWCI
- 0.19
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Plasma Science (publishedVersion)
- Funders
- Regional Innovation and Development Joint Fund of the National Natural Science Foundation of China (U22A20225)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Pulsed Power Technology Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- parasitic inductance, parasitic resistance, equilibrium points
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
