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Cited by 60Silicon Carbide Semiconductor TechnologiesMicrostructure and mechanical propertiesAdvanced ceramic materials synthesis

The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.

Dislocation Cores and Hardness Polarity of 4H‐SiC

Ning, Xian‐Jie, Huvey, Nicolas, Pirouz, Pirouz·1997·Journal of the American Ceramic Society
DOI 10.1111/j.1151-2916.1997.tb03033.x
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Abstract

The hardness of opposite basal faces of 4H‐SiC single crystals has been measured in the temperature range 25°‐1200°3C. A strong hardness anisotropy between the silicon‐terminated (0001) and carbon‐terminated (0001) faces of this polar crystal has been found. Transmission electron microscopy investigation of the dislocations in the plastic zone of the 1200°3C indentations shows that they lie predominantly on the basal planes parallel to the indented face, and the extra‐half planes of the nonscrew dislocations originate from the indented face. It is also found that, when the (0001) Si‐terminated face is indented, the dislocations are either widely dissociated, with the width of the stacking fault ribbon much larger than the equilibrium value, or else they are single leading partials, with the corresponding trailing partials absent. In this case, all the leading partials are found to have a silicon core. On the other hand, the dislocations in the plastic zone of the carbon‐terminated face are in the form of dissociated dislocations, with the width of the associated stacking fault ribbons appreciably less than the equilibrium value. Moreover, the leading partials of éhese dissociated dislocations have a carbon core. The results indicate that the hardness of the polar basal faces of 4H‐SiC at elevated temperatures is partly determined by the nature of the dislocation cores nucleated by the indentation process. It is argued that this is due to the influence of the core on the generation and glide of the leading partial dislocations.

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Crossref · 10.1111/j.1151-2916.1997.tb03033.x

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Research works printed but not linked: 4

  1. Hirth J. P., 1963, The Relation between the Structure and Strength in Metals., 218
  2. Hirth J. P., 1968, Theory of Dislocations.
  3. Warren P. D., 1984, Simultaneous Observation of α‐and β‐Dislocation Movement and Their Effect on the Fracture Behaviour of GaAs, Philos. Mag. A, 50, L23
  4. Yang J. W., 1994, Japan—US Workshop on Functional Fronts in Advanced Ceramics., 55

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Metadata

Authors
Ning, X., Huvey, N., & Pirouz, P.
Affiliations
  • Case Western Reserve University (US)
  • Université Paris-Sud (FR)
  • American Ceramic Society (US)
Venue
Journal of the American Ceramic Society
Publisher
Wiley
Published
1997-07
Volume
80
Issue
7
Pages
1645-1652
ISSN
  • 0002-7820 (ISSN-L)
  • 1551-2916
DOI
10.1111/j.1151-2916.1997.tb03033.x
OpenAlex
W2106976336
Cited by
60
References
24
Citations by year
2026: 4 · 2025: 3 · 2024: 4 · 2023: 2 · 2022: 3 · 2021: 2 · 2020: 3 · 2019: 1 · 2018: 1 · 2014: 2 · 2013: 3 · 2012: 4
FWCI
4.01
Type
journal article
Language
en
Open access
closed
Licence
onlinelibrary.wiley.com/termsAndConditions#vor (vor, 2760 d)
Locations
Journal of the American Ceramic Society (publishedVersion)
Funders
U.S. Department of Energy (FG0293ER45496)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Materials Science › Metals and Alloys › Microstructure and mechanical properties
  • Physical Sciences › Materials Science › Ceramics and Composites › Advanced ceramic materials synthesis
Keywords
4H-SiC, silicon carbide, hardness anisotropy, dislocation core structure, indentation, dislocation dissociation, stacking faults, partial dislocations, basal plane, temperature dependence of hardness, plastic zone

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