The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Dislocation Cores and Hardness Polarity of 4H‐SiC
Abstract
The hardness of opposite basal faces of 4H‐SiC single crystals has been measured in the temperature range 25°‐1200°3C. A strong hardness anisotropy between the silicon‐terminated (0001) and carbon‐terminated (0001) faces of this polar crystal has been found. Transmission electron microscopy investigation of the dislocations in the plastic zone of the 1200°3C indentations shows that they lie predominantly on the basal planes parallel to the indented face, and the extra‐half planes of the nonscrew dislocations originate from the indented face. It is also found that, when the (0001) Si‐terminated face is indented, the dislocations are either widely dissociated, with the width of the stacking fault ribbon much larger than the equilibrium value, or else they are single leading partials, with the corresponding trailing partials absent. In this case, all the leading partials are found to have a silicon core. On the other hand, the dislocations in the plastic zone of the carbon‐terminated face are in the form of dissociated dislocations, with the width of the associated stacking fault ribbons appreciably less than the equilibrium value. Moreover, the leading partials of éhese dissociated dislocations have a carbon core. The results indicate that the hardness of the polar basal faces of 4H‐SiC at elevated temperatures is partly determined by the nature of the dislocation cores nucleated by the indentation process. It is argued that this is due to the influence of the core on the generation and glide of the leading partial dislocations.
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“It carries seven primary payload instruments, nineteen cameras, and two microphones. 198”
From Energy system and resource utilization in space: A state-of-the-art review (2024) · cites this paper as [198]
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Energy system and resource utilization in space: A state-of-the-art review
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Metadata
- Authors
- Ning, X., Huvey, N., & Pirouz, P.
- Affiliations
- Case Western Reserve University (US)
- Université Paris-Sud (FR)
- American Ceramic Society (US)
- Venue
- Journal of the American Ceramic Society
- Publisher
- Wiley
- Published
- 1997-07
- Volume
- 80
- Issue
- 7
- Pages
- 1645-1652
- ISSN
- 0002-7820 (ISSN-L)
- 1551-2916
- OpenAlex
- W2106976336
- Cited by
- 60
- References
- 24
- Citations by year
- 2026: 4 · 2025: 3 · 2024: 4 · 2023: 2 · 2022: 3 · 2021: 2 · 2020: 3 · 2019: 1 · 2018: 1 · 2014: 2 · 2013: 3 · 2012: 4
- FWCI
- 4.01
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of the American Ceramic Society (publishedVersion)
- Funders
- U.S. Department of Energy (FG0293ER45496)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Materials Science › Metals and Alloys › Microstructure and mechanical properties
- Physical Sciences › Materials Science › Ceramics and Composites › Advanced ceramic materials synthesis
- Keywords
- 4H-SiC, silicon carbide, hardness anisotropy, dislocation core structure, indentation, dislocation dissociation, stacking faults, partial dislocations, basal plane, temperature dependence of hardness, plastic zone
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