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Ohmic contacts to n-GaAs using graded band gap layers of Ga1−x In x As grown by molecular beam epitaxy
Abstract
Ohmic contacts were studied on structures which utilize the fact that for InAs surfaces Fermi level pinning occurs at or in the conduction band. It was found that an epitaxial layer of n-Ga1−xInxAs grown by molecular beam epitaxy on n-GaAs which is graded in composition from x = 0 at the GaAs interface to 0.8?x?1.0 at the surface will produce a structure with a nearly zero Schottky barrier height for the metal–Ga1−xInxAs interface and hence a low resistance ohmic contact. A transmission line measurement of non-alloyed contact resistance of 5×10−7<Rc<5×10−6 ohm cm2 was obtained for a Ag/n-Ga1−xInxAs/n-GaAs MESFET structure.
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Citations
Cited by
The structure and properties of metal-semiconductor interfaces
BRILLSON, L. (1982) · Surface Science Reports · doi:10.1016/0167-5729(82)90001-2 · Cited by 928
Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
Noguchi, M., Hirakawa, K., & Ikoma, T. (1991) · Physical Review Letters · doi:10.1103/physrevlett.66.2243 · Cited by 267
Efficient terahertz emission from InAs nanowires
Seletskiy, D. V., Hasselbeck, M. P., Cederberg, J. G., Katzenmeyer, A., Toimil-Molares, M. E., Léonard, F., Talin, A. A., & Sheik-Bahae, M. (2011) · Physical Review B · doi:10.1103/physrevb.84.115421 · Cited by 81
Metadata
- Authors
- Woodall, J. M., Freeouf, J. L., Pettit, G. D., Jackson, T., & Kirchner, P.
- Venue
- Journal of Vacuum Science and Technology
- Publisher
- American Vacuum Society
- Published
- 1981-09-01
- Volume
- 19
- Issue
- 3
- Pages
- 626-627
- ISSN
- 0022-5355 (ISSN-L)
- OpenAlex
- W1995866090
- Cited by
- 195
- References
- 0
- FWCI
- 2.01
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Ohmic contacts to n-GaAs using graded band gap layers of Ga1−x In x As grown by molecular beam epitaxy. https://app.cochat.ai/papers/10.1116/1.571074
- The paper
- Woodall, J. M., Freeouf, J. L., Pettit, G. D., Jackson, T., & Kirchner, P. (1981). Ohmic contacts to n-GaAs using graded band gap layers of Ga1−x In x As grown by molecular beam epitaxy. Journal of Vacuum Science and Technology. https://doi.org/10.1116/1.571074
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
