The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
Abstract
The electronic structures of clean InAs(100) surfaces have been investigated by in situ high-resolution electron-energy-loss spectroscopy. Intrinsic electron accumulation layers with carrier densities strongly depending on the surface reconstruction are formed on both As-stabilized and In-stabilized surfaces. The correlation between the surface electron densities and the surface reconstructions suggests that electrons in the accumulation layers are induced by the donorlike intrinsic surface states of InAs whose energy spectrum is determined by the surface reconstructions.
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Citations
Cites
Electronic structure and the properties of solids
Harrison, W. A. (1980) · Cited by 4,193
Self-Consistent Results forn-Type Si Inversion Layers
Stern, F. (1972) · Physical Review B · doi:10.1103/physrevb.5.4891 · Cited by 1,176
Schottky barriers and semiconductor band structures
Tersoff, J. (1985) · Physical review. B, Condensed matter · doi:10.1103/physrevb.32.6968 · Cited by 384
Superconducting Proximity Effect in the Native Inversion Layer on InAs
Takayanagi, H., & Kawakami, T. (1985) · Physical Review Letters · doi:10.1103/physrevlett.54.2449 · Cited by 237
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Cited by
Photogating in Low Dimensional Photodetectors
Fang, H., & Hu, W. (2017) · Advanced Science · doi:10.1002/advs.201700323 · Cited by 986
Intrinsic Electron Accumulation at Clean InN Surfaces
Mahboob, I., Veal, T. D., McConville, C. F., Lu, H., & Schaff, W. J. (2004) · Physical Review Letters · doi:10.1103/physrevlett.92.036804 · Cited by 489
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Joyce, H. J., Docherty, C. J., Gao, Q., Tan, H. H., Jagadish, C., Lloyd-Hughes, J., Herz, L. M., & Johnston, M. B. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/21/214006 · Cited by 300
Strong Terahertz Emission and Its Origin from Catalyst-Free InAs Nanowire Arrays
Arlauskas, A., Treu, J., Saller, K., Beleckaitė, I., Koblmüller, G., & Krotkus, A. (2014) · Nano Letters · doi:10.1021/nl404737r · Cited by 40
Metadata
- Authors
- Noguchi, M., Hirakawa, K., & Ikoma, T.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1991-04-29
- Volume
- 66
- Issue
- 17
- Pages
- 2243-2246
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W1965825984
- Cited by
- 267
- References
- 5
- FWCI
- 2.51
- Type
- journal article
- Language
- en
- Open access
- closed
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- Noguchi, M., Hirakawa, K., & Ikoma, T. (1991). Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces. Physical Review Letters. https://doi.org/10.1103/physrevlett.66.2243
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