Study of Dill's B parameter measurement of EUV resist
Abstract
Our group previously explored methods for measuring simulation parameter for advanced chemically amplified (CA) resists, including development parameters [1]. Dill’s C parameter [2-3] , acid diffusion length generated from PAG [4], and de-protection reaction parameters [5-6]. We performed simulations of EUV resists using these parameters, the results of which allowed us to examine the conditions for reducing LER and improving resolution. This paper discusses a method for measuring the Dill’s B parameter, which had been difficult to measure with conventional methods. We also confirmed that enhancing the resist polymer’s EUV light absorption is effective in improving the sensitivity of the CA resist.
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A notable study discovered a correlation between the transmissivity of photoresists at EUV wavelengths and the amount of incorporated tellurium.
“One notable study discovered a correlation between the transmissivity of photoresists at EUV wavelengths and the amount of incorporated tellurium [29].”
From Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography (2024) · cites this paper as [29]
Cites
EUV resists based on tin-oxo clusters
Cardineau, B., Del Re, R., Al-Mashat, H., Marnell, M., Vockenhuber, M., Ekinci, Y., Sarma, C., Neisser, M., Freedman, D. A., & Brainard, R. L. (2014) · SPIE Proceedings · doi:10.1117/12.2046536 · Cited by 67 · see citing works
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Research works printed but not linked: 7
- Sekiguchi Atsushi and Matsumoto Yoko, “A Study of acid diffusion behaviors from PAG by using tio coat method for ArF Lithography”, proc. of SPIE, vol. 9051, pp.9051 90511S1–90511S13, 2014 · DOI
- 10.2494/photopolymer.27.623 · DOI
- 10.2494/photopolymer.16.209 · DOI
- 10.2494/photopolymer.27.595 · DOI
- 10.2494/photopolymer.22.85 · DOI
- 10.1143/JJAP.44.5556 · DOI
- Bakshi Vivek “EUV Lithography”, SPIE (WILEY INTERCIENCE), PP. 392–394
Cited by
Sorted by citations
Absorption coefficient of metal-containing photoresists in the extreme ultraviolet
Fallica, R., Haitjema, J., Wu, L., Castellanos Ortega, S., Brouwer, A. M., & Ekinci, Y. (2018) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.17.2.023505 · Cited by 105 · see citing works
Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography
Hasan, M. W., Deeb, L., Kumaniaev, S., Wei, C., & Wang, K. (2024) · Micromachines · doi:10.3390/mi15091122 · Cited by 29 · see citing works
- Authors
- Sekiguchi, A., Matsumoto, Y., Harada, T., Watanabe, T., & Kinoshita, H.
- Affiliations
- Litho Tech Japan Corporation (Japan) (JP)
- University of Hyogo (JP)
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2015-03-13
- Volume
- 9422
- Pages
- 94222L
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W1998302214
- Cited by
- 10
- References
- 1
- Citations by year
- 2025: 1 · 2024: 2 · 2018: 3 · 2016: 3 · 2015: 1
- FWCI
- 2.89
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Chemistry › Organic Chemistry › Photopolymerization techniques and applications
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV resist, chemically amplified resists, periaqueductal gray, line edge roughness, resolution, resist sensitivity
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