The DOI matches its Crossref record.
How we are making the 0.5-NA Berkeley mirco-field exposure tool stable and productive
Open accessAbstract
Vibration levels in MET5 exposures were reduced from 1.5 nm RMS to 0.8 nm RMS by tuning the vibration isolation system and removing non-compliant hardware. Frequency doubling exposures were improved by replacing the Fourier synthesis pupil scanner mirror. Focus-exposure-matrix outliers have been solved by patching a bug in the control software. 9 nm half-pitch lines and 8 nm half-pitch lines were printed in 11 nm thick MOx resist.
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The BMET5 (Berkeley micro-exposure tool 0.5 NA) at the Advanced Light Source of Lawrence Berkeley National Laboratory has demonstrated resolution down to 8 nm half pitch using frequency doubling.
“The BMET5 (Berkeley micro-exposure tool 0.5 NA) tool at the Advanced Light Source of Law rence Berkeley National Laboratory has demonstrated resolution down to 8 nm half pitch (HP) using frequency doubling 49 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [49]
Section 1 describes frequency-doubled MET5 imaging at 8 nm half-pitch, and Section 4 reports 8 nm half-pitch lines printed in resist in February 2020. The cited copy does not establish the claim’s specific location at the Advanced Light Source of Lawrence Berkeley National Laboratory. (LLM, conf=0.82)
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Research works printed but not linked: 1
- J. Harvey et. al, "Total integrated scatter from surfaces with arbitrary roughness, correlation widths, and incident angles", pt. Eng. 51(1), 013402 (Feb 06, 2012).
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Metadata
- Authors
- Anderson, C. N., Allezy, A., Chao, W., Conley, L., Cork, C., Cork, W., Delano, R., DePonte, J., Dickinson, M., Gaines, G., Gamsby, J., Gullikson, E., Jones, G., McQuade, L., Miyakawa, R., Naulleau, P., Rekawa, S., Salmassi, F., Vollmer, B., Zehm, D., & Zhu, W.
- Affiliations
- Lawrence Berkeley National Laboratory (US)
- Inpria (United States) (US)
- ORCID
- Venue
- Extreme Ultraviolet (EUV) Lithography XI
- Publisher
- SPIE
- Published
- 2020-03-23
- Pages
- 7
- OpenAlex
- W3022720589
- Cited by
- 7
- References
- 0
- Citations by year
- 2025: 5 · 2022: 1 · 2021: 1
- FWCI
- 0.70
- Type
- conference paper
- Language
- en
- Open access
- green
- escholarship.org
- Locations
- SPIE Conference on Extreme Ultraviolet (EUV) Lithography (publishedVersion)
- eScholarship (California Digital Library) (submittedVersion)
- Funders
- U.S. Department of Energy (-AC02-05CH11231, DE AC02 05CH11231)
- Samsung
- Lawrence Berkeley National Laboratory (AC02‐05CH11231, DE-AC02-05CH11231, 05CH11231)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Keywords
- vibration isolation, second harmonic generation, focus exposure matrix
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