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Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)
Abstract
Three sets of projection optics (Sets 1, 2, and 3) were fabricated to the mark of a wave front error (WFE) of less than 1 nm. The RMS WFE is 7.5 nm for Set 1, 1.9 nm for Set 2, and at most 0.9 nm for Set 3. In addition, the RMS mid-spatial frequency roughness (MSFR), which affects flare, is 0.34 nm for Set 2 and 0.17 nm for Set 3. This paper discusses the current lithographic performance of HINA, especially the evaluation of flare and the replication of fine-pitch patterns. Several EUV masks were fabricated to evaluate the effects of flare and to replicate fine-pitch patterns. In the case of Set 2 optics, 90 nm lines and spaces were barely delineated using a bright-field mask due to the RMS MSFR of 0.34 nm, and replication of 70 nm lines and spaces were achieved using a dark-field mask. Since the RMS WFE and the RMS MSFR for Set 3 optics are half as much as that for Set 2 optics, the lithographic performance of HINA is markedly improved. 50 nm lines and spaces of non-chemically-amplified resist were delineated with the illumination condition of a partial coherence, σ, of 0.8 and 45 nm lines and spaces were delineated with the annular illumination condition of outer σ of 0.8 and inner σ of 0.5. In addition ultimate resolution of 30 nm lines and spaces of chemically-amplified resist was performed under the coherent illumination condition of σ of 0.0.
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Metadata
- Authors
- Oizumi, H., Tanaka, Y., Kumasaka, F., Nishiyama, I., Kondo, H., Shiraishi, M., Oshino, T., Sugisaki, K., & Murakami, K.
- Affiliations
- Association of Super-Advanced Electronics (JP)
- Nikon (Japan) (JP)
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 2005-05-06
- Volume
- 5751
- Pages
- 102
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2049338386
- Cited by
- 37
- References
- 0
- Citations by year
- 2024: 1 · 2022: 1 · 2020: 1 · 2019: 1 · 2016: 1
- FWCI
- 14.30
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Keywords
- EUV lithography, Hina, wavefront error, flares, EUV masks, annular illumination, coherent illumination, chemically amplified resists, non-chemically amplified resist
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