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Projection Printing Characterization:
Abstract
Projection printing eliminates the problems introduced by hard-contacting the mask to the wafer while maintaining the high resolution requirements of the integrated circuit manufacturer. Certain advantages of projection printing are obvious: the wafers are not contaminated or damaged by contact with the mask, and the mask will not wear out. Less obvious are the steps required to maximize the advantages of projection printing, thereby reducing costs and increasing yields. This paper considers photoresist choices, suggests some procedures to determine process variables, and discusses mask costs and quality effects.
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Selvaraja, S. K., Jaenen, P., Bogaerts, W., Thourhout, D. V., Dumon, P., & Baets, R. (2009) · Journal of Lightwave Technology · doi:10.1109/jlt.2009.2022282 · Cited by 221
“picts the measured line width as a function of focus and exposure dose (so-called Bossung curve) [17].”
BackgroundExtreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
“An intuitive way of characterizing the impact of focus and dose variations to estimate and optimize tolerances is to use a Bossung plot 81 .”
Jenkins, R. P., Campbell, S. D., & Werner, D. H. (2021) · Nanophotonics · doi:10.1515/nanoph-2021-0428 · Cited by 61
Line edge roughness and intrinsic bias for two methacrylate polymer resist systems
Pawloski, A. R., Acheta, A., Levinson, H., et al. (2006) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.2200675 · Cited by 28
Run-to-Run Critical Dimension and Sidewall Angle Lithography Control Using the PROLITH Simulator
Chemali, C. E., Freudenberg, J. S., Hankinson, M., et al. (2004) · IEEE Transactions on Semiconductor Manufacturing · doi:10.1109/tsm.2004.831530 · Cited by 27
“This consists of visualizing the FEM data by generating two CD plots called Bossung plots [14], one for the isolated lines [Fig.”
MethodVectorial diffraction of extreme ultraviolet light and ultrashort light pulses
Nugrowati, A. M. (2008) · Research Repository (Delft University of Technology) · Cited by 24
New model for focus-exposure data analysis
Mack, C. A., & Byers, J. D. (2003) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.485040 · Cited by 20
“Figure 1 shows a typical example of the output of a focus-exposure matrix using linewidth as the response (sidewall angle and resist loss can also be plotted in the same way) in what is called a Bossung plot [4].”
BackgroundData analysis for photolithography
Mack, C. A., Legband, D. A., & Jug, S. (1999) · Microelectronic Engineering · doi:10.1016/s0167-9317(99)00016-7 · Cited by 18
EUV pattern defect detection sensitivity based on aerial image linewidth measurements
Goldberg, K. A., Mochi, I., Naulleau, P. P., et al. (2009) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.3264676 · Cited by 14
Keil, K., Choi, K., Hohle, C. K., et al. (2008) · Microelectronic Engineering · doi:10.1016/j.mee.2008.01.042 · Cited by 14
Groß, H., Zügge, H., Peschka, M., et al. (2006) · doi:10.1002/9783527699254.ch2 · Cited by 14
Bossung curves: an old technique with a new twist for sub-90-nm nodes
Zavecz, T. E. (2006) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.656642 · Cited by 12
Resolution and depth of focus in optical lithography
Mack, C. A. (1997) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.280550 · Cited by 10
“The most common of these curves, Figure 2a, is called the Bossung plot [7] and shows linewidth versus focus for different exposures.”
BackgroundClassification Framework for Analysis and Modeling of Physically Induced Reliability Violations
Rodopoulos, D., Psychou, G., Sabry, M. M., et al. (2015) · ACM Computing Surveys · doi:10.1145/2678276 · Cited by 9
Jenkins, R. P., Campbell, S. D., & Werner, D. H. (2022) · ACS Photonics · doi:10.1021/acsphotonics.2c01166 · Cited by 9
Mack, C. A. (2009) · SPIE eBooks · doi:10.1117/3.665802.p71 · Cited by 8
Focus effects in submicron optical lithography, part 4: metrics for depth of focus
Mack, C. A. (1995) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.209276 · Cited by 8
Analysis of focus errors in lithography using phase-shift monitors
Fontaine, B. M. L., Dusa, M. V., Krist, J., et al. (2002) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.474581 · Cited by 8
“Using a focus-exposure matrix (FEM), one can also generate a family of curves representing linewidth change through focus, which is called a Bossung plot.(7) From these plots, the best focus and depth of focus can be estimated for different type of features.”
MethodPerformance monitoring of run-to-run control systems used in semiconductor manufacturing
Prabhu, A. V. (2008) · Texas ScholarWorks (Texas Digital Library) · Cited by 6
A systematic study of source error in source mask optimization
Alleaume, C., Yesilada, E., Farys, V., et al. (2010) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.864246 · Cited by 5
Effect of carbon contamination on the printing performance of extreme ultraviolet masks
Fan, Y.-J., Yankulin, L., Antohe, A. O., et al. (2010) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.3333434 · Cited by 5
Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging
Fan, Y.-J., Yankulin, L., Antohe, A. O., et al. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.814196 · Cited by 5
Comparison between e-beam direct write and immersion lithography for 20-nm node
Brandt, P., Sardana, C., Ibbotson, D. E., et al. (2015) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.14.3.031214 · Cited by 5
High resolution patterning – Preparation of VSB systems for 22nm node capability
Hahmann, P., Boettcher, M., Klein, M. W., et al. (2009) · Microelectronic Engineering · doi:10.1016/j.mee.2009.11.065 · Cited by 5
Application of phase shift focus monitor in EUVL process control
Sun, L., Raghunathan, S., Jindal, V., et al. (2013) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2011342 · Cited by 4
“( ) 2 2 2 1 2 1 2 2 2 1 2 1 2 ( 2 cos ) ( 0) 1 4 ( 2 cos ) r r r r I n I n r r r r φ π φ + + = = ⋅ = + − (1) ( ) 2 0 I n = = (2) ( ) 3 1 ( 1) 9 I n I n = = = (3) where n=0, 1, 2, 3 are the diffraction orders.”
Process variability band analysis for quantitative optimization of exposure conditions
Sturtevant, J. L., Jayaram, S., & Hong, L. (2009) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.816501 · Cited by 3
Li, J., Hu, S., & Zhao, L. (2014) · Optik · doi:10.1016/j.ijleo.2014.07.089 · Cited by 3
Absorber topography dependence of phase edge effects
Shanker, A., Sczyrba, M., Connolly, B., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2197861 · Cited by 3
Accelerating Electromagnetic Inverse-Design using Deep Learning
Jenkins, R. P., Campbell, S. D., Werner, P. L., et al. (2022) · European Conference on Antennas and Propagation · doi:10.23919/eucap53622.2022.9769171 · Cited by 2
Probabilistic process window: a new approach to focus-exposure analysis
Mack, C. A., Yannuzzi, J., Lorusso, G. F., et al. (2023) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.22.2.021007 · Cited by 2
Greul, M., Shoshi, A., Klikovits, J., et al. (2024) · Journal of Micro/Nanopatterning Materials and Metrology · doi:10.1117/1.jmm.23.2.024601 · Cited by 2
Lee, H. C., Lee, H., van Leuken, D., et al. (2025) · IEEE Transactions on Semiconductor Manufacturing · doi:10.1109/tsm.2025.3530971 · Cited by 2
“Finally, Bossung [20] analysis determined dose sensitivity = 0.34 nm/%, which is a relevant parameter as speckle contrast is a local dose variation effect and is needed in the estimation of the speckle contribution to the total LWR.”
InfluentialLithographic Projection Lenses
Groß, H., Blechinger, F., & Achtner, B. (2008) · doi:10.1002/9783527699247.ch9 · Cited by 2
Bandelier, P., Charley, A.-L., & Lagrange, A. (2013) · doi:10.1002/9781118557662.ch1 · Cited by 2
Process window-based feature and die failure rate prediction
Sturtevant, J. L., Yin, L., Kim, Y. C., et al. (2019) · doi:10.1117/12.2516101 · Cited by 1
An effective lithography training module adapting semianalytical calculation approaches
Çakmak, A. Ö., Çolak, E., & Awadelkarim, O. O. (2021) · Journal of the Society for Information Display · doi:10.1002/jsid.1067 · Cited by 1
“5 case follows a response as proposed in Bossung model of equations.(28) In contrast, higher NA case, despite a promisingly good resolution gets critically degraded.”
BackgroundSingle-Wafer Combinatorial Optimization of Border Rings for Bulk Acoustic Wave Filters
Talley, K. R., Taber, B. N., Morton, R., et al. (2024) · Journal of Microelectromechanical Systems · doi:10.1109/jmems.2024.3409155 · Cited by 1
“Multiple BR designs are challenging to include on a single wafer, as while BR width can be modified with a focus-exposure matrix (FEM) [17] or through multivariate masks, controlling BR thickness across a wafer often involves multiple photolithography and deposition steps.”
BackgroundScanner focus metrology for advanced node scanner monitoring and control
Kim, J., Park, Y., Jeong, T., et al. (2015) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.2084671 · Cited by 1
Multiple exposure on single blank for electron-beam writer characterization
Eilert, A., Finken, M., Buergel, C., et al. (2018) · SPIE Photomask Technology Conference · doi:10.1117/12.2501760 · Cited by 1
Fuller, G. E. (2007) · CRC Press eBooks · doi:10.1201/9781420017663.ch18 · Cited by 1
Optical diffraction-based methodology to measure on-product EUV exposure focus variations
Root, W. O. '., Park, J., Nam, Y., et al. (2024) · doi:10.1117/12.3010370 · Cited by 1
Deep Learning and Evolutionary Optimization Methods for Electromagnetic Devices
Jenkins, R. P., Campbell, S. D., Werner, P. L., et al. (2023) · URSI International Symposium on Electromagnetic Theory · doi:10.1109/emts57498.2023.10925327 · Cited by 1
Compensation for Lithography Induced Process Variations during Physical Design
Chin, E. Y. (2011) · eScholarship (California Digital Library) · Cited by 1
Methods for comparative extraction of OPC response
Zavecz, T. E. (2007) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.712151 · Cited by 1
Brodie, I., & Muray, J. J. (1982) · Springer eBooks · doi:10.1007/978-1-4899-2160-4_4 · Cited by 1
Design and Measurement of Parameter-Specific Ring Oscillators
Wang, L. T.-N. (2010) · UC Berkeley · Cited by 1
Characterizing the process window of a double-exposure dark-field alternating phase-shift mask
Mack, C. A. (2002) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.475680
“Figure 1 shows a typical example of the output of a focus-exposure matrix using linewidth as the response (sidewall angle and resist loss can also be plotted in the same way) in what is called a Bossung plot [1].”
BackgroundAnalyse des modèles résines pour la correction des effets de proximité en lithographie optique
Top, M. K. (2011) · doi:10.70675/51cae633zb1eez47f1z97a7za62f6ffc7909
“7) [21].”
Process window modeling using focus balancing technique
Isoyan, A., Croffie, E. H., & Melvin, L. S. (2011) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/1.3662407
Discovering metasurface robustness through deep learning
Jenkins, R. P., Campbell, S. D., Werner, D. H., & Werner, P. L. (2021) · Metamaterials, Metadevices, and Metasystems · doi:10.1117/12.2593465
“This has a direct impact on the cost though, as designs which will tolerate a wider range of possible processes (a.k.a. process window) will be more successful at passing quality assurance tests [11,12] .”
BackgroundBrodie, I., & Muray, J. J. (1992) · Springer eBooks · doi:10.1007/978-1-4757-6775-9_5
Utilizing Bossung Plot to Calibrate OPC Optical Model
Wang, J. (2022) · China Semiconductor Technology International Conference (CSTIC) · doi:10.1109/cstic55103.2022.9856895
Robustness Optimization of Nanophotonic Devices Using Deep Learning
Jenkins, R. P., Campbell, S. D., Werner, P. L., et al. (2022) · IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI) · doi:10.1109/ap-s/usnc-ursi47032.2022.9887138
“) for which fabrication will succeed [3].”
Full Minimum Feature Size Enforcement Toward Freeform Optical Metasurfaces at Wafer-Scale
Jenkins, R. P., Campbell, S. D., Werner, P. L., et al. (2023) · IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (AP-S/URSI) · doi:10.1109/usnc-ursi52151.2023.10238121
“Indeed, reducing the needed precision in the lithographic process has always been an essential ingredient in for scaling up fabrication [3].”
BackgroundTu, Y. (2026) · Synthesis lectures on engineering, science, and technology · doi:10.1007/978-3-032-04000-8_5
Yuan-yuan, Z., Huang, X., Peng, L.-N., et al. (2026) · Optics & Laser Technology · doi:10.1016/j.optlastec.2026.115940
Metadata
- Authors
- Bossung, J. W.
- Affiliations
- PerkinElmer (United States) (US)
- Corresponding author
- Bossung, John W.
- Venue
- SPIE Proceedings
- Publisher
- SPIE
- Published
- 1977-08-08
- Volume
- 0100
- Pages
- 80-85
- ISSN
- 0277-786X (ISSN-L)
- OpenAlex
- W2046658518
- Cited by
- 57
- References
- 0
- Citations by year
- 2026: 3 · 2025: 1 · 2024: 4 · 2023: 3 · 2022: 4 · 2021: 3 · 2019: 1 · 2018: 1 · 2015: 4 · 2014: 1 · 2013: 2
- FWCI
- 0.00
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Physical Sciences › Engineering › Industrial and Manufacturing Engineering › Industrial Vision Systems and Defect Detection
- Keywords
- projection printing, photolithography, process parameter optimization, integrated circuit fabrication, wafer contamination, yield improvement
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