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A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x
Abstract
We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn x Ge 1− x , in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p -type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a ±0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.
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Cited by
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Drummond, T. G., Hill, M. G., & Barton, J. K. (2003) · Nature Biotechnology · doi:10.1038/nbt873 · Cited by 2,214
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Liz-Marzán, L. M. (2006) · Langmuir · doi:10.1021/la0513353 · Cited by 1,645
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De, M., Ghosh, P. S., & Rotello, V. M. (2008) · Advanced Materials · doi:10.1002/adma.200703183 · Cited by 1,547
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Metadata
- Authors
- Park, Y. D., Hanbicki, A. T., Erwin, S. C., Hellberg, C. S., Sullivan, J. M., Mattson, J. E., Ambrose, T. F., Wilson, A., Spanos, G., & Jonker, B. T.
- Venue
- Science
- Published
- 2002-01-25
- Volume
- 295
- Issue
- 5555
- Pages
- 651-654
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2140167371
- Cited by
- 1,631
- References
- 0
- FWCI
- 89.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- Park, Y. D., Hanbicki, A. T., Erwin, S. C., Hellberg, C. S., Sullivan, J. M., Mattson, J. E., Ambrose, T. F., Wilson, A., Spanos, G., & Jonker, B. T. (2002). A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x. Science. https://doi.org/10.1126/science.1066348
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