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Cited by 1,961

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Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

Choi, K. J., Biegalski, M., Li, Y. L., Sharan, A., Schubert, J., Uecker, R., Reiche, P., Chen, Y. B., Pan, X. Q., Gopalan, V., Chen, L.-Q., Schlom, D. G., Eom, C. B.·2004·Science

Abstract

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO 3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO 3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

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Metadata

Authors
Choi, K. J., Biegalski, M., Li, Y. L., Sharan, A., Schubert, J., Uecker, R., Reiche, P., Chen, Y. B., Pan, X. Q., Gopalan, V., Chen, L.-Q., Schlom, D. G., & Eom, C. B.
Venue
Science
Published
2004-11-05
Volume
306
Issue
5698
Pages
1005-1009
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2125713092
Cited by
1,961
References
0
FWCI
29.79
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films. https://app.cochat.ai/papers/10.1126/science.1103218
The paper
Choi, K. J., Biegalski, M., Li, Y. L., Sharan, A., Schubert, J., Uecker, R., Reiche, P., Chen, Y. B., Pan, X. Q., Gopalan, V., Chen, L.-Q., Schlom, D. G., & Eom, C. B. (2004). Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films. Science. https://doi.org/10.1126/science.1103218

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.