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Cited by 536

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Room-Temperature Spin Memory in Two-Dimensional Electron Gases

Kikkawa, J. M., Smorchkova, I. P., Samarth, N., Awschalom, D. D.·1997·Science

Abstract

Time-resolved Kerr reflectivity of two-dimensional electron gases in II-VI semiconductors provides a direct measure of electron spin precession and relaxation over a temperature range from 4 to 300 kelvin. The introduction of n -type dopants increases the electronic spin lifetimes several orders of magnitude relative to insulating counterparts, a trend that is also observed in doped bulk semiconductors. Because the electronic spin polarization in these systems survives for nanoseconds, far longer than the electron-hole recombination lifetime, this technique reveals thousands of spin precession cycles of 15 gigahertz per tesla within an electron gas. Remarkably, these spin beats are only weakly temperature dependent and persist to room temperature.

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Crossref · 10.1126/science.277.5330.1284

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Metadata

Authors
Kikkawa, J. M., Smorchkova, I. P., Samarth, N., & Awschalom, D. D.
Venue
Science
Published
1997-08-29
Volume
277
Issue
5330
Pages
1284-1287
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2006616502
Cited by
536
References
1
FWCI
15.79
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Room-Temperature Spin Memory in Two-Dimensional Electron Gases. https://app.cochat.ai/papers/10.1126/science.277.5330.1284
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Kikkawa, J. M., Smorchkova, I. P., Samarth, N., & Awschalom, D. D. (1997). Room-Temperature Spin Memory in Two-Dimensional Electron Gases. Science. https://doi.org/10.1126/science.277.5330.1284

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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