The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Holey and Unholey Semiconductors
Abstract
Cooling electronic devices can often be necessary to optimize performance. Traditional approaches to cooling are typically based on thermodynamic cycles involving compression and expansion of refrigerant gases (such as Freon). The heat required for vaporization is drawn from the materials or the volume (for example, a refrigerator) that is to be cooled. Thermoelectric (TE) materials, in contrast, do not rely on chemicals or gases but rather on a special physical phenomena called the Peltier effect, which is explained in detail below (1). In TE materials, heat is not primarily transported by the lattice but by the electrical charge carriers—electrons or holes. Applying an electrical current through a TE material cools one end and transports the heat to the other end of the material or device. This has distinct advantages in that it is solid-state refrigeration, without moving parts and vibrations, and with quiet performance and the ability for localized “spot” cooling. This can be very important for many semiconducting and other electronic devices. But until recently, the efficiency of TE devices has been frustratingly low, and applications remain limited.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
CRC Handbook of Thermoelectrics
(2018) · CRC Press eBooks · doi:10.1201/9781420049718 · Cited by 5,787
Effect of quantum-well structures on the thermoelectric figure of merit
Hicks, L. D., & Dresselhaus, M. S. (1993) · Physical Review B · doi:10.1103/physrevb.47.12727 · Cited by 3,749
Materials for thermoelectric energy conversion
Wood, C. (1988) · Reports on Progress in Physics · doi:10.1088/0034-4885/51/4/001 · Cited by 1,121
Semiconducting Ge clathrates: Promising candidates for thermoelectric applications
Nolas, G. S., Cohn, J. L., Slack, G. A., & Schujman, S. B. (1998) · Applied Physics Letters · doi:10.1063/1.121747 · Cited by 962
Multilayer Thermionic Refrigeration
Mahan, G. D., & Woods, L. M. (1998) · Physical Review Letters · doi:10.1103/physrevlett.80.4016 · Cited by 318
Cited by
Thermoelectric Cooling and Power Generation
DiSalvo, F. J. (1999) · Science · doi:10.1126/science.285.5428.703 · Cited by 3,240
Compromise and Synergy in High‐Efficiency Thermoelectric Materials
Zhu, T., Liu, Y., Fu, C., Heremans, J. P., Snyder, J. G., & Zhao, X. (2017) · Advanced Materials · doi:10.1002/adma.201605884 · Cited by 1,616
Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View
Tritt, T. M., & Subramanian, M. A. (2006) · MRS Bulletin · doi:10.1557/mrs2006.44 · Cited by 1,515
Self-citationIntrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit
Li, Y., Wang, G., Zhu, X., Liu, M., Ye, C., Chen, X., Wang, Y., He, K., Wang, L., Ma, X., et al. (2010) · Advanced Materials · doi:10.1002/adma.201000368 · Cited by 441
Extraordinary role of Hg in enhancing the thermoelectric performance of p-type SnTe
Tan, G., Shi, F., Doak, J. W., Sun, H., Zhao, L.-D., Wang, P., Uher, C., Wolverton, C., Dravid, V. P., & Kanatzidis, M. G. (2015) · Energy & Environmental Science · doi:10.1039/c4ee01463d · Cited by 401
Metadata
- Authors
- Tritt, T. M.
- Venue
- Science
- Published
- 1999-02-05
- Volume
- 283
- Issue
- 5403
- Pages
- 804-805
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W1551152190
- Cited by
- 732
- References
- 5
- FWCI
- 12.58
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Holey and Unholey Semiconductors. https://app.cochat.ai/papers/10.1126/science.283.5403.804
- The paper
- Tritt, T. M. (1999). Holey and Unholey Semiconductors. Science. https://doi.org/10.1126/science.283.5403.804
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.