Cited by 9Advanced Semiconductor Detectors and MaterialsAdvanced Thermoelectric Materials and DevicesSemiconductor materials and interfaces

Shubnikov-de Haas Measurements in N-Type Pb1-xSnxTe

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Takafuji, Yutaka, Narita, Shin-ichiro·1982·Japanese Journal of Applied Physics

Abstract

Relatively large n-type Pb 1-x Sn x Te single crystals with various x values (x=0–0.28) were prepared and the Shubnikov-de Haas oscillations were measured. The results indicate that the Fermi surface consists of four [111] spheroids whose anisotropies increase with decreasing band gap. The effective mass and effective g *-values of the conduction band were estimated as functions of the alloy composition, and the results are analyzed by a simple two-band non-parabolic model, which gives the transverse momentum matrix element P ⊥=√0.58(1+0.211 x)/2, and the longitudinal momentum matrix element P //=√0.046(1-0.142 x)/2, both in atomic units (a.u.).

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  1. [3]H. Kawamura, S. Takano, S. Hotta, S. Nishi, Y. Kato, K. L. I. Kobayashi and K. F. Komatsubara: Proc. Int. Conf. Phys. of Semiconductors, Stuttgart, 1974 (B. G. Teubner, Stuttgart, 1974) p. 551.
  2. [2]T. C. Harman: Proc. Conf. Phys. Semimetals & Narrow Gap Semiconductors, eds. D. L. Carter and R. T. Bate (Pergamon Press, New York, 1970) p. 363.
  3. [4]I. Melngailis and T. C. Harman: Semiconductors and Semimetals, eds. R. K. Willardson and A. C. Beer (Academic Press, New York, 1970) Vol. 5, p. 111.
  4. [11]K. F. Cuff, M. R. Ellet, C. D. Kuglin and L. R. Williams: Proc. Int. Conf. Phys. Semiconductors, Paris, 1964 (Dunod, Paris, 1964) p. 677.
  5. [10]K. F. Cuff, M. R. Ellet, C. D. Kuglin and L. R. Williams: Proc. Int. Conf. Phys. Semiconductors, Exeter, 1962 (The Inst. Phys. & The Phys. Soc., London, 1962) p. 316.
  6. [12]P. J. Stiles, E. Burstein and D. N. Langenberg: Proc. Int. Conf. Phys. Semiconductors, Exeter, 1962 (The Inst. Phys. & The Phys. Soc., London, 1962) p. 577.
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  8. [21]J. R. Burke, J. D. Jensen and B. Houston: Proc. Conf. Phys. Semimetals & Narrow-Gap Semiconductors, eds. D. L. Carter and R. T. Bate (Pergamon Press, New York, 1970) p. 393.
  9. [22]I. Melngailis, J. A. Kaflas and T. C. Harman: Proc. Conf. Phys. Semimetals & Narrow-Gap Semiconductors, eds. D. L. Carter and R. T. Bate (Pergamon Press, New York, 1970) p. 407.
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Authors
Takafuji, Y., & Narita, S.-I.
Affiliations
The University of Osaka (JP)
Venue
Japanese Journal of Applied Physics
Published
1982-09-01
Volume
21
Issue
9R
Pages
1315
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W1966320300
Cited by
9
References
20
Citations by year
2024: 1 · 2016: 1 · 2012: 1
FWCI
0.00
Type
journal article
Language
en
Open access
Locations
Japanese Journal of Applied Physics (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
  • Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
Keywords
Shubnikov-de Haas effect, lead tin telluride, n-type semiconductors, Fermi surface, Fermi surface anisotropy, effective mass, effective g-factor, two-band model, alloy composition dependence, band gap, single crystals

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