Band Structure and Laser Action inPbxSn1−xTe
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The bulk band gap of Pb1-xSnxTe undergoes a band inversion when the Pb/Sn ratio is changed.
“The bulk band gap of Pb 1 À x Sn x Te alloy system undergoes a band inversion upon changing the Pb/Sn ratio 8-10 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [9]
Cites
Herman, F., Skillman, S., & ARENTS, J. (1964) · Journal of The Electrochemical Society · doi:10.1149/1.2426131 · Cited by 3,997 · see citing works
Physics of quantum electronics
Tannenwald, P. E., Kelley, P. L., & Lax, B. (1965) · Physics Today · doi:10.1063/1.3047721 · Cited by 968 · see citing works
New Type of Negative Resistance in Barrier Tunneling
Esaki, L., & Stiles, P. J. (1966) · Physical Review Letters · doi:10.1103/physrevlett.16.1108 · Cited by 174 · see citing works
Conklin, J. B., Johnson, L. E., & Pratt, G. W. (1965) · Physical Review · doi:10.1103/physrev.137.a1282 · Cited by 163 · see citing works
OPTICALLY PUMPED SEMICONDUCTOR LASER
Phelan, R. J., & Rediker, R. H. (1965) · Applied Physics Letters · doi:10.1063/1.1754170 · Cited by 48 · see citing works
Nikolić, P. M. (1965) · British Journal of Applied Physics · doi:10.1088/0508-3443/16/8/303 · Cited by 38 · see citing works
Dielectric constant and fundamental lattice frequency of lead telluride
Bylander, E. G., & Hass, M. (1966) · Solid State Communications · doi:10.1016/0038-1098(66)90104-9 · Cited by 26 · see citing works
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Topological insulators with inversion symmetry
Fu, L., & Kane, C. L. (2007) · Physical Review B · doi:10.1103/physrevb.76.045302 · Cited by 4,252 · see citing works
Topological crystalline insulators in the SnTe material class
Hsieh, T. H., Lin, H., Liu, J., Duan, W., Bansil, A., & Fu, L. (2012) · Nature Communications · doi:10.1038/ncomms1969 · Cited by 1,449 · see citing works
Topological crystalline insulator states in Pb1−xSnxSe
Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., et al. (2012) · Nature Materials · doi:10.1038/nmat3449 · Cited by 820 · see citing works
Xu, S.-Y., Liu, C., Alidoust, N., Neupane, M., Qian, D., Belopolski, I., Denlinger, J. D., Wang, Y. J., Lin, H., Wray, L. A., et al. (2012) · Nature Communications · doi:10.1038/ncomms2191 · Cited by 691 · see citing works
Phase Transition in SnTe with Low Carrier Concentration
Iizumi, M., Hamaguchi, Y., F. Komatsubara, K., & Kato, Y. (1975) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.38.443 · Cited by 165 · see citing works
Observation of interplay between phonon chirality and electronic band topology
Hernandez, F. G. G., Baydin, A., Chaudhary, S., Tay, F., Katayama, I., Takeda, J., Nojiri, H., Okazaki, A. K., Rappl, P. H. O., Abramof, E., et al. (2023) · Science Advances · doi:10.1126/sciadv.adj4074 · Cited by 65 · see citing works
Investigation of band inversion in (Pb,Sn)Te alloys using<i>ab initio</i>calculations
Gao, X., & Daw, M. S. (2008) · Physical Review B · doi:10.1103/physrevb.77.033103 · Cited by 58 · see citing works
Shubnikov-de Haas Measurements in N-Type Pb<sub>1-x</sub>Sn<sub>x</sub>Te
Takafuji, Y., & Narita, S.-I. (1982) · Japanese Journal of Applied Physics · doi:10.1143/jjap.21.1315 · Cited by 9 · see citing works
- Authors
- Dimmock, J. O., Melngailis, I., & Strauss, A. J.
- Affiliations
- MIT Lincoln Laboratory (US)
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 1966-06-27
- Volume
- 16
- Issue
- 26
- Pages
- 1193-1196
- ISSN
- 0031-9007 (ISSN-L)
- OpenAlex
- W28994220
- Cited by
- 461
- References
- 7
- Citations by year
- 2026: 5 · 2025: 15 · 2024: 10 · 2023: 10 · 2022: 13 · 2021: 13 · 2020: 26 · 2019: 16 · 2018: 16 · 2017: 21 · 2016: 12 · 2015: 17 · 2014: 20 · 2013: 9 · 2012: 8
- FWCI
- 28.94
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Physical Review Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Keywords
- lead tin telluride, electronic band structure, laser action, semiconductor lasers, SnTe
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
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