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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Open accessAbstract
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm 2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.
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Citations
Cited by
Indium nitride (InN): A review on growth, characterization, and properties
Bhuiyan, A. G., Hashimoto, A., & Yamamoto, A. (2003) · Journal of Applied Physics · doi:10.1063/1.1595135 · Cited by 848
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Neugebauer, J., & Scheffler, M. (2008) · Physical Review B · doi:10.1103/physrevb.77.075202 · Cited by 411
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
Stampfl, C., & Van de Walle, C. G. (2002) · Physical Review B · doi:10.1103/physrevb.65.155212 · Cited by 276
Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities
Someya, T., Werner, R., Forchel, A., Catalano, M., Cingolani, R., & Arakawa, Y. (1999) · Science · doi:10.1126/science.285.5435.1905 · Cited by 262
Metadata
- Authors
- Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1996-01-01
- Volume
- 35
- Issue
- 1B
- Pages
- L74
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2042916342
- Cited by
- 2,502
- References
- 0
- FWCI
- 171.99
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S. (1996). InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.35.l74
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