The DOI matches its Crossref record; 87 of the 87 references it cites were found in a registry or an index.
Progress and prospects of group-III nitride semiconductors
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Citations
Cites
Temperature dependence of the energy gap in semiconductors
Varshni, Y. P. (1967) · Physica · doi:10.1016/0031-8914(67)90062-6 · Cited by 5,469
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Strite, S., & Morkoç, H. (1992) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585897 · Cited by 2,883
Self-citationThe physics of semiconductor devices
Grubin, H. (1979) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.1979.1069942 · Cited by 2,753
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Self-citationInGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S. (1996) · Japanese Journal of Applied Physics · doi:10.1143/jjap.35.l74 · Cited by 2,502
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
Nonmetallic crystals with high thermal conductivity
Slack, G. A. (1973) · Journal of Physics and Chemistry of Solids · doi:10.1016/0022-3697(73)90092-9 · Cited by 2,151
Evershed, R. P., Charters, S., & Quye, A. (1995) · Cambridge University Press eBooks · Cited by 2,071
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
Cited by
Indium nitride (InN): A review on growth, characterization, and properties
Bhuiyan, A. G., Hashimoto, A., & Yamamoto, A. (2003) · Journal of Applied Physics · doi:10.1063/1.1595135 · Cited by 848
Fabrication and performance of GaN electronic devices
Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(00)00028-0 · Cited by 507
Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H., & Morkoç, H. (1997) · Journal of Applied Physics · doi:10.1063/1.365801 · Cited by 168
Self-citation
Metadata
- Authors
- Mohammad, S. N., & Morkoç, H.
- Venue
- Progress in Quantum Electronics
- Publisher
- Elsevier BV
- Published
- 1996-01
- Volume
- 20
- Issue
- 5-6
- Pages
- 361-525
- ISSN
- 0079-6727 (ISSN-L)
- OpenAlex
- W2025704001
- Cited by
- 502
- References
- 87
- FWCI
- 15.47
- Type
- journal article
- Language
- en
- Open access
- closed
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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- The paper
- Mohammad, S. N., & Morkoç, H. (1996). Progress and prospects of group-III nitride semiconductors. Progress in Quantum Electronics. https://doi.org/10.1016/s0079-6727(96)00002-x
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
