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Cited by 548

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition

Open access
Kazunori Minegishi, Kazunori Minegishi, Yasushi Koiwai, Yasushi Koiwai, Yukinobu Kikuchi, Yukinobu Kikuchi, Koji Yano, Koji Yano, Masanobu Kasuga, Masanobu Kasuga, Azuma Shimizu, Azuma Shimizu·1997·Japanese Journal of Applied Physics

Abstract

The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH 3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.

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Crossref · 10.1143/jjap.36.l1453

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Metadata

Authors
Kazunori Minegishi, K. M., Yasushi Koiwai, Y. K., Yukinobu Kikuchi, Y. K., Koji Yano, K. Y., Masanobu Kasuga, M. K., & Azuma Shimizu, A. S.
Venue
Japanese Journal of Applied Physics
Published
1997-11-01
Volume
36
Issue
11A
Pages
L1453
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W2055988461
Cited by
548
References
1
FWCI
6.21
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition. https://app.cochat.ai/papers/10.1143/jjap.36.l1453
The paper
Kazunori Minegishi, K. M., Yasushi Koiwai, Y. K., Yukinobu Kikuchi, Y. K., Koji Yano, K. Y., Masanobu Kasuga, M. K., & Azuma Shimizu, A. S. (1997). Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.36.l1453

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.