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Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling
Abstract
Phase Change Memory (PCM) is an emerging memory technology that can increase main memory capacity in a cost-effective and power-efficient manner. However, PCM cells can endure only a maximum of 107 - 108 writes, making a PCM based system have a lifetime of only a few years under ideal conditions. Furthermore, we show that non-uniformity in writes to different cells reduces the achievable lifetime of PCM system by 20x. Writes to PCM cells can be made uniform with Wear-Leveling. Unfortunately, existing wear-leveling techniques require large storage tables and indirection, resulting in significant area and latency overheads.
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Cites
Handbook of applied cryptography
(1997) · Choice Reviews Online · doi:10.5860/choice.34-4512 · Cited by 10,357
Cited by
Emerging Memory Technologies: Recent Trends and Prospects
Yu, S., & Chen, P.-Y. (2016) · IEEE Solid-State Circuits Magazine · doi:10.1109/mssc.2016.2546199 · Cited by 555
Recent Progress in Phase-ChangeMemory Technology
Burr, G. W., BrightSky, M. J., Sebastian, A., Cheng, H.-Y., Wu, J.-Y., Kim, S., Sosa, N. E., Papandreou, N., Lung, H.-L., Pozidis, H., et al. (2016) · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · doi:10.1109/jetcas.2016.2547718 · Cited by 393
Overcoming the challenges of crossbar resistive memory architectures
Xu, C., Niu, D., Muralimanohar, N., Balasubramonian, R., Zhang, T., Yu, S., & Xie, Y. (2015) · 2015 IEEE 21st International Symposium on High Performance Computer Architecture (HPCA) · doi:10.1109/hpca.2015.7056056 · Cited by 340
Metadata
- Authors
- Qureshi, M. K., Karidis, J., Franceschini, M., Srinivasan, V., Lastras, L., & Abali, B.
- Venue
- Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture
- Publisher
- ACM
- Published
- 2009-12-12
- Pages
- 14-23
- ISSN
- 1072-4451 (ISSN-L)
- OpenAlex
- W2112753327
- Cited by
- 762
- References
- 1
- FWCI
- 33.74
- Type
- conference paper
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling. https://app.cochat.ai/papers/10.1145/1669112.1669117
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- Qureshi, M. K., Karidis, J., Franceschini, M., Srinivasan, V., Lastras, L., & Abali, B. (2009). Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling. Proceedings of the 42nd Annual IEEE/ACM International Symposium on Microarchitecture. https://doi.org/10.1145/1669112.1669117
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