Cited by 3Advanced DC-DC ConvertersWireless Power Transfer SystemsInduction Heating and Inverter Technology

Considerations of Physical Design and Implementation for 5 MHz-100 W LLC Resonant DC-DC Converters

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Hariya, Akinori, Matsuura, Ken, Yanagi, Hiroshige, Tomioka, Satoshi, Ishizuka, Yoichi, Ninomiya, Tamotsu·2016·Active and Passive Electronic Components

Abstract

Recently, high power-density, high power-efficiency, and wide regulation range isolated DC-DC converters have been required. This paper presents considerations of physical design and implementation for wide regulation range MHz-level LLC resonant DC-DC converters. The circuit parameters are designed with 3–5 MHz-level switching frequency. Also, the physical parameters and the size of the planar transformer are optimized by using derived equations and finite element method (FEM) with Maxwell 3D. Some experiments are done with prototype LLC resonant DC-DC converter using gallium nitride high electron mobility transistors (GaN-HEMTs); the input voltage is 42–53 V, the reference output voltage is 12 V, the load current is 8 A, the maximum switching frequency is about 5 MHz, the total volume of the circuit is 4.1 cm3, and the power density of the prototype converter is 24.4 W/cc.

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Crossref · 10.1155/2016/4027406

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Research works printed but not linked: 12

  1. M. D. Seeman, S. R. Bahl, D. I. Anderson, and G. A. Shah, "Advantages of GaN in a high-voltage resonant LLC converter, " in Proceedings of the 29th Annual IEEE Applied Power Electronics Conference and Exposition (APEC '14), pp. 476-483, IEEE, Fort Worth, Tex, USA, March 2014.
  2. M. Tian, Y. Hao, K. Wang et al., "EMI modeling and experiment of a GaN based LLC half-bridge converter, " in Proceedings of the 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia), pp. 1961-1966, IEEE, Seoul, South Korea, June 2015.
  3. D. Reusch and J. Strydom, "Evaluation of gallium nitride transistors in high frequency resonant and soft-switching DC- DC Converters, " IEEE Transactions on Power Electronics, vol. 30, no. 9, pp. 5151-5158, 2015.
  4. W. Zhang, Y. Long, Y. Cui et al., "Impact o f planar transformer winding capacitance on Si-based and GaN-based LLC resonant converter, " in Proceedings of the IEEE Applied Power Electronics Conference (APEC '13), pp. 1668-1674, March 2013.
  5. D. Reusch and F. C. Lee, "High frequency isolated bus converter with gallium nitride transistors and integrated transformer, " in Proceedings of the 4th Annual IEEE Energy Conversion Congress and Exposition (ECCE '12), pp. 3895-3902, Raleigh, NC, USA, September 2012.
  6. Z. Zhang, K. D. T. Ngo, and J. L. Nilles, "A 30-W flyback converter operating at 5 MHz, " in Proceedings of the 29th Annual IEEE Applied Power Electronics Conference and Exposition (APEC '14), pp. 1415-1421, Fort Worth, Tex, USA, March 2014.
  7. L. Cong and H. Lee, "A 110-250V 2MHz isolated DC-DC con- verter with integrated high-speed synchronous three-level gate drive, " in Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE '15), pp. 1479-1484, IEEE, Montreal, Canada, September 2015.
  8. H. B. Kotte, R. Ambatipudi, S. Haller, and K. Bertilsson, "A ZVS half bridge DC-DC Converter in MHz frequency region using novel hybrid power transformer, " in Proceedings of the International Exhibition and Conf. for Power Electronics, Intelligent Motion, Power Quality (PCIM '12), pp. 399-406, Nuremberg, Germany, May 2012.
  9. H. P. Park and J. H. Jung, "Design considerations of 1 MHz LLC resonant converter with GaN E-HEMT, " in Proceedings of the 17th European Conference on Power Electronics and Applications (EPE '15 ECCE-Europe), pp. 1-10, Geneva, Switzerland, 2015.
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  11. S. Yang, M. Shoyama, and S. Abe, "Design of low-profile LLC resonant converter for low transformer loss, " in Proceedings of the IEEE Region 10 Conference (TENCON '10), pp. 1301-1306, Fukuoka, Japan, November 2010.
  12. B. Lu, W. Liu, Y. Liang, F. C. Lee, and J. D. Van Wyk, "Optimal design methodology for LLC resonant converter, " in Proceedings of the 21st Annual IEEE Applied Power Electronics Conference and Exposition (APEC '06), pp. 533-538, March 2006.

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Authors
Hariya, A., Matsuura, K., Yanagi, H., Tomioka, S., Ishizuka, Y., & Ninomiya, T.
Affiliations
  • Nagasaki University (JP)
  • TDK (Japan) (JP)
  • TDK-Lambda Corporation (Japan) (JP)
  • Green Electronics Research Institute, Kitakyushu, 1-1 Jyonai, Kokurakita-ku, Kitakyushu-shi, Fukuoka, Japan
Corresponding author
Hariya, Akinori
Venue
Active and Passive Electronic Components
Publisher
Wiley
Published
2016
Volume
2016
Pages
1-11
ISSN
  • 0882-7516 (ISSN-L)
  • 1563-5031
OpenAlex
W2523930088
Cited by
3
References
4
Citations by year
2024: 1 · 2022: 1 · 2019: 1
FWCI
0.15
Type
journal article
Language
en
Open access
Locations
  • Active and Passive Electronic Components (publishedVersion, cc-by)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion)
  • Institutional Repositories DataBase (IRDB) (submittedVersion, other-oa)
  • Nagasaki University's Academic Output SITE (Nagasaki University) (submittedVersion, cc-by-nc-nd)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Wireless Power Transfer Systems
  • Physical Sciences › Engineering › Mechanical Engineering › Induction Heating and Inverter Technology
Keywords
LLC resonant converter, DC-DC converter, high switching frequency, gallium nitride HEMT, high power density, isolated converter

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