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Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

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Xiang, Yuren, Zhou, Chunlan, Jia, Endong, Wang, Wenjing·2015·Nanoscale Research Letters
DOI 10.1186/s11671-015-0798-2PMC PMC4385324
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Abstract

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al 2 O 3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al 2 O 3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al 2 O 3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al 2 O 3 stacks, the minimum interface trap density was reduced from original 3 × 10 12 to 1 × 10 12 cm −2 eV −1 , the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10 12 cm −2 for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al 2 O 3 deposition on Al 2 O 3 single layers and a-Si:H(i)/Al 2 O 3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

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Crossref · 10.1186/s11671-015-0798-2

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Figures

Figure 1 Schematic representation of sample preparation.
Figure 1 Schematic representation of sample preparation.CC BY · PubMed Central
Figure 2 Effective lifetime for n-type Si capped with Al 2 O 3 films before and after annealing. The thickness of Al2O3 films is about 20 nm and the annealing process is done at 450°C for 10 min in air. The substrate temperature (Sub-T) and the number of ALD cycles are also shown here.
Figure 2 Effective lifetime for n-type Si capped with Al 2 O 3 films before and after annealing. The thickness of Al2O3 films is about 20 nm and the annealing process is done at 450°C for 10 min in air. The substrate temperature (Sub-T) and the number of ALD cycles are also shown here.CC BY · PubMed Central
Figure 3 Al 2p XPS spectra of Al 2 O 3 films. The films were deposited by T-ALD (a) and by PE-ALD (b). The solid black lines represent the fitted curves.
Figure 3 Al 2p XPS spectra of Al 2 O 3 films. The films were deposited by T-ALD (a) and by PE-ALD (b). The solid black lines represent the fitted curves.CC BY · PubMed Central
Figure 4 O 1 s XPS spectra of Al 2 O 3 films. Films were deposited by T-ALD (a) and by PE-ALD (b). The solid black lines represent the fitted curves.
Figure 4 O 1 s XPS spectra of Al 2 O 3 films. Films were deposited by T-ALD (a) and by PE-ALD (b). The solid black lines represent the fitted curves.CC BY · PubMed Central
Figure 5 D it spectra of a-Si:H (left side) and Al 2 O 3 /a-Si:H stack (right side). The Al2O3 films deposited on PE-SA-1 and PE-SA-2 by PE-ALD at 200°C. The Al2O3 films deposited on T-SA-1 by T-ALD at 200°C. PE-SA-1a, PE-SA-2a, and T-SA-1a are the samples only covered by the a-Si:H films and PE-SA-1, PE-SA-2, and T-SA-1 refer to the stack structure samples. The a-Si:H(i)/Al2O3 stack samples (the structures of samples are shown in Table 1) have been annealed at 450°C for 10 min in air. ‘Dots’ are the measured data by the non-contact corona C-V technology. ‘Fit curve’ are fitted curves for the measured data using the simplified density of an interface state model, which can been de-convoluted to ‘Defect’ and ‘Fit curve 2’.
Figure 5 D it spectra of a-Si:H (left side) and Al 2 O 3 /a-Si:H stack (right side). The Al2O3 films deposited on PE-SA-1 and PE-SA-2 by PE-ALD at 200°C. The Al2O3 films deposited on T-SA-1 by T-ALD at 200°C. PE-SA-1a, PE-SA-2a, and T-SA-1a are the samples only covered by the a-Si:H films and PE-SA-1, PE-SA-2, and T-SA-1 refer to the stack structure samples. The a-Si:H(i)/Al2O3 stack samples (the structures of samples are shown in Table 1) have been annealed at 450°C for 10 min in air. ‘Dots’ are the measured data by the non-contact corona C-V technology. ‘Fit curve’ are fitted curves for the measured data using the simplified density of an interface state model, which can been de-convoluted to ‘Defect’ and ‘Fit curve 2’.CC BY · PubMed Central
Figure 6 Effective lifetime for single-side a-Si:H capped Si before and after Al 2 O 3 deposited. The Al2O3 films were deposited on PE-SA-1 and PE-SA-2 using PE-ALD at 200°C. The Al2O3 films were deposited on T-SA-1 using T-ALD at 200°C. After Al2O3 film deposition, the samples were annealed at 450°C for 10 min in air.
Figure 6 Effective lifetime for single-side a-Si:H capped Si before and after Al 2 O 3 deposited. The Al2O3 films were deposited on PE-SA-1 and PE-SA-2 using PE-ALD at 200°C. The Al2O3 films were deposited on T-SA-1 using T-ALD at 200°C. After Al2O3 film deposition, the samples were annealed at 450°C for 10 min in air.CC BY · PubMed Central

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Research works printed but not linked: 1

  1. Savtchouk MW A, Edelman P, Lagowski J, Zhan X, Rong Y, Ted G, et al. Interface traps at intrinsic ia-Si:H/c-Si interfaces. In: 24th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes. 2014.

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Metadata

Authors
Xiang, Y., Zhou, C., Jia, E., & Wang, W.
Affiliations
Chinese Academy of Sciences (CN)
Corresponding author
Zhou, Chunlan
ORCID
Venue
Nanoscale Research Letters
Publisher
Springer Science and Business Media LLC
Published
2015-03-19
Volume
10
Issue
1
Pages
137-137
ISSN
  • 1556-276X (ISSN-L)
  • 1931-7573
DOI
10.1186/s11671-015-0798-2
PMC
PMC4385324
OpenAlex
W2068597222
Cited by
18
References
26
Citations by year
2026: 3 · 2025: 1 · 2024: 3 · 2023: 1 · 2022: 1 · 2021: 2 · 2019: 3 · 2018: 1 · 2017: 1 · 2016: 2
FWCI
0.64
Type
journal article
Language
en
Open access
Licence
Locations
  • Nanoscale Research Letters (publishedVersion, cc-by)
  • Europe PMC (PubMed Central) (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon and Solar Cell Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
Keywords
Al2O3 thin films, atomic layer deposition, surface passivation, interface trap density, silicon solar cells, plasma-enhanced ALD, thermal ALD, carrier lifetime, field-effect passivation, chemical passivation

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CoChat. (2026). Citation check: Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks. https://app.cochat.ai/papers/10.1186/s11671-015-0798-2
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Xiang, Y., Zhou, C., Jia, E., & Wang, W. (2015). Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks. Nanoscale Research Letters. https://doi.org/10.1186/s11671-015-0798-2