Cited by 35Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesAdvanced optical system design

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Wavelength considerations in soft-x-ray projection lithography

Hawryluk, Andrew M., Ceglio, Natale M.·1993·Applied Optics

Abstract

The choice of the operational wavelength for a soft-x-ray projection lithography system affects a wide variety of system parameters such as optical design, sources, resists, and multilayer mirrors. Several system constraints limit the choice for the operational wavelength. In particular, optical imaging requirements place an upper limit and throughput issues place a lower limit on the wavelength selection. We have determined that there are several discrete wavelength regions between 10 and 25 nm that satisfy the system-imposed constraints of high resolution, large depth of focus, and high throughput.

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Crossref · 10.1364/ao.32.007062

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2 of 2 references verified0 citation errors · 0 not checkable

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Metadata

Authors
Hawryluk, A. M., & Ceglio, N. M.
Affiliations
Lawrence Livermore National Laboratory (US)
Venue
Applied Optics
Published
1993-12-01
Volume
32
Issue
34
Pages
7062
ISSN
  • 0003-6935 (ISSN-L)
  • 1539-4522
OpenAlex
W2153896914
Cited by
35
References
2
Citations by year
2024: 1 · 2021: 1 · 2018: 1 · 2017: 1 · 2014: 3 · 2013: 2 · 2012: 3
FWCI
3.96
Type
journal article
Language
en
Open access
closed
Locations
  • Applied Optics (publishedVersion)
  • PubMed (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
Keywords
soft x-ray projection lithography, wavelength selection, optical design, multilayer mirrors, X-ray sources, X-ray resist, depth of focus, image resolution, throughput, EUV lithography

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