InGaAsP/InP membrane gain sections for III-V/SiNx heterogeneous photonic integration
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We present a fabrication process for 200 nm thick InGaAsP/InP membrane gain sections ( = 1550 nm) suitable for heterogeneous integration with SiN x PICs. The structures exhibit desired electrical performance and support lasing.
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Exemplar demonstrations of a heterogeneous PIC platform include high-power (>300 mW) low-noise lasers incorporating flip-chipped semiconductor optical amplifiers, surface-bonded optical gain media, and low-loss surface-bonded thin-film lithium-niobate (TFLN) waveguides.
“Exemplar demonstrations of such a heterogeneous PIC platform include high-power (>300 mW) low-noise lasers incorporating flip-chipped semiconductor optical amplifiers (figure 3(d)) [17], surface-bonded optical gain media (figure 3(c)) [18,19], and low-loss surface-bonded thin-film lithium-niobate (TFLN) waveguides (figure 3(b)) [20].”
From 2022 Roadmap on integrated quantum photonics (2022) · cites this paper as [19]
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Cites
Photonic Integrated Circuits Using Heterogeneous Integration on Silicon
Komljenović, T., Huang, D., Pintus, P., Tran, M. A., Davenport, M. L., & Bowers, J. E. (2018) · Proceedings of the IEEE · doi:10.1109/jproc.2018.2864668 · Cited by 198 · see citing works
Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014) · Optics Express · doi:10.1364/oe.22.012139 · Cited by 153 · see citing works
Sorace-Agaskar, C., Kharas, D., Yegnanarayanan, S., Maxson, R. T., West, G. N., Loh, W., Bramhavar, S., Ram, R. J., Chiaverini, J., Sage, J., et al. (2019) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2019.2904443 · Cited by 102 · see citing works
Self-citationStrained-Layer Quantum-Well Lasers
Adams, A. R. (2011) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2011.2108995 · Cited by 92 · see citing works
Formation of III–V-on-insulator structures on Si by direct wafer bonding
Yokoyama, M., Iida, R., Ikku, Y., et al. (2013) · Semiconductor Science and Technology · doi:10.1088/0268-1242/28/9/094009 · Cited by 54 · see citing works
Fujii, T., Takeda, K., Kanno, E., et al. (2017) · IEICE Transactions on Electronics · doi:10.1587/transele.e100.c.196 · Cited by 3 · see citing works
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2022 Roadmap on integrated quantum photonics
Moody, G., Sorger, V. J., Blumenthal, D. J., Juodawlkis, P. W., Loh, W., Sorace-Agaskar, C., Jones, A. E., Balram, K. C., Matthews, J. C. F., Laing, A., et al. (2022) · Journal of Physics: Photonics · doi:10.1088/2515-7647/ac1ef4 · Cited by 6 · see citing works
“Exemplar demonstrations of such a heterogeneous PIC platform include high-power (>300 mW) low-noise lasers incorporating flip-chipped semiconductor optical amplifiers (figure 3(d)) [17], surface-bonded optical gain media (figure 3(c)) [18, 19], and low-loss surface-bonded thin-film lithium-niobate (TFLN) waveguides (f…”
BackgroundSelf-citation
- Authors
- Heidelberger, C., Santis, C. T., Plant, J. J., Morissette, E. M., Kharas, D., Swint, R. B., Yariv, A., & Juodawlkis, P. W.
- Affiliations
- MIT Lincoln Laboratory (US)
- California Institute of Technology (US)
- Corresponding author
- Heidelberger, Christopher
- Venue
- Conference on Lasers and Electro-Optics
- Publisher
- Optica Publishing Group
- Published
- 2021
- Pages
- STh2H.1
- OpenAlex
- W3194322916
- Cited by
- 3
- References
- 6
- Citations by year
- 2022: 1 · 2021: 2
- FWCI
- 1.18
- Type
- conference paper
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- Conference on Lasers and Electro-Optics (publishedVersion)
- CaltechAUTHORS (California Institute of Technology) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photonic Crystals and Applications
- Keywords
- InGaAsP/InP, silicon nitride photonic integrated circuits, 1.55 μm lasers, semiconductor lasers
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