Cited by 189Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and Devices

Cavity Q, Mode Volume, and Lasing Threshold in Small Diameter AlGaAs Microdisks with Embedded Quantum Dots

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Srinivasan, Kartik, Borselli, Matthew, Painter, Oskar, Stintz, Andreas, Krishna, Sanjay·2006·Optics Express

Abstract

The quality factor (Q), mode volume (V(eff)), and room-temperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that Veff can be as small as 2(lambda/n)(3) while maintaining radiation-limited Qs in excess of 10(5). Microdisks of diameter 2 microm are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at lambda = 1317 nm. For devices with V(eff) ~2 (lambda/n)(3), Qs as high as 1.2x10(5) are measured passively in the 1.4 microm band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 microm band, with room temperature, continuous-wave thresholds as low as 1 microW of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with laser differential efficiency as high as xi ~ 16% and out-coupling efficiency in excess of 28%.

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Crossref · 10.1364/oe.14.001094

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  • In conventional dielectric cavities, the effective volume cannot fall below the order of ∼(λc/2n)^3; in planar microcavities, the effective volume can be approximated by the effective cavity length.

    “Since the effective volume (Veff ) depends on the electric field distribution (E ( → r ) ) and the relative permittivity of the medium ( ε ( → r ) ), in conventional dielectric cavities, it cannot fall below the order ∼ ( λ c /2 n ) 3 . However, the effective volume can be approximated by the effective cavity length (Leff ) in the case of a planar configuration of the microcavities [280-282]:”

    From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [282]

    The Simulations section (p. 3) defines effective mode volume using the dielectric constant and electric-field strength, but does not give a lower bound for conventional dielectric cavities. Its results concern microdisks (p. 4), not an approximation of volume by effective cavity length in planar microcavities. Searches for the planar-cavity approximation and the stated lower bound found no supporting passage in our copy. (LLM, conf=0.77)

    Experimental — accuracy not yet measured

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Research works printed but not linked: 5

  1. [18]18. S. M. Spillane, T. J. Kippenberg, K. J. Vahala, K. W. Goh, E. Wilcut, and H. J. Kimble, 'UltrahighQ toroidal microresonators for cavity quantum electrodynamics,' Phys. Rev. A 71, 013817 (2005).
  2. [28]28. E. Kuramochi, M. Notomi, S. Mitsugi, A. Shinya, T. Tanabe, and T. Watanabe, 'Photonic crystal nanocavity formed by local width modulation of line-defect with Q of one million,' In LEOS 2005, Post-Deadline Session PD 1.1 , (IEEE Lasers and Electro-Optics Society, 2005).
  3. [33]33. H. Pask, H. Summer, and P. Blood, 'Localized Recombination and Gain in Quantum Dots,' In Tech. Dig. Conf. on Lasers and Electro-Optics, CThH3 , (Optical Society of America, Baltimore, MD, 2005).
  4. [35]35. J. Vuˇ ckovi´ c, O. Painter, Y . Xu, A. Yariv, and A. Scherer, 'FDTD Calculation of the Spontaneous Emission Coupling Factor in Optical Microcavities,' IEEE J. Quan. Elec. 35, 1168-1175 (1999).
  5. [36]36. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (John Wiley & Sons, Inc., New York, NY, 1995).

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  • Metal Oxide Thin Films for Advanced Photonic Applications

    Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2 · see citing works

    “…the effective volume can be approximated by the effective cavity length (L eff ) in the case of a planar configuration of the microcavities [280–282]: where L MC is the length of the planar microcavity, L DBR ′ is the length of the DBR, and d high and d low are the thicknesses of each layer of…”

Authors
Srinivasan, K., Borselli, M., Painter, O., Stintz, A., & Krishna, S.
Affiliations
  • California Institute of Technology (US)
  • University of New Mexico (US)
Venue
Optics Express
Published
2006
Volume
14
Issue
3
Pages
1094
ISSN
1094-4087 (ISSN-L)
OpenAlex
W2070211675
Cited by
189
References
34
Citations by year
2026: 2 · 2025: 7 · 2024: 16 · 2023: 2 · 2022: 6 · 2021: 13 · 2020: 14 · 2019: 7 · 2018: 9 · 2017: 11 · 2016: 6 · 2015: 12 · 2014: 11 · 2013: 10 · 2012: 10
FWCI
10.79
Type
journal article
Language
en
Open access
Locations
  • Optics Express (publishedVersion)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • CaltechAUTHORS (California Institute of Technology) (submittedVersion)
  • CERN Document Server (European Organization for Nuclear Research) (submittedVersion)
  • arXiv (Cornell University)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
Keywords
microdisk lasers, embedded quantum dots, InAs quantum dots, quality factor, mode volume, lasing threshold, room-temperature lasing, standing wave modes

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