Uncertainty improvement of geometrical thickness and refractive index measurement of a silicon wafer using a femtosecond pulse laser
Open accessAbstract
We have proposed a modified method to improve the measurement uncertainty of the geometrical thickness and refractive index of a silicon wafer. Because measurement resolution based on Fourier domain analysis depends on the spectral bandwidth of a light source directly, a femtosecond pulse laser having the broad spectral bandwidth of about 100 nm was adopted as a new light source. A phase detection algorithm in Fourier domain was also modified to minimize the effect related to environmental disturbance. Since the wide spectral bandwidth may cause a dispersion effect in the optical parts of the proposed interferometer, it was considered carefully through numerical simulations. In conclusion, the measurement uncertainty of geometrical thickness was estimated to be 48 nm for a double-polished silicon wafer having the geometrical thickness of 320.7 μm, which was an improvement of about 20 times that obtained by the previous method.
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The precision of n(ω) is the best value reported for a planar sample and is comparable with the precision of the interferometric measurement of prism-shaped samples.
“This precision of n ( ω ) is the best value that has so far been reported for a planar sample, and is comparable with the precision of the interferometric measurement of prism-shaped samples 12 .”
From Ultra-precise determination of thicknesses and refractive indices of optically thick dispersive materials by dual-comb spectroscopy (2022) · cites this paper as [12]
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Thickness and refractive index measurement of a silicon wafer based on an optical comb
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Self-citationCoppola, G., Ferraro, P., Iodice, M., et al. (2003) · Applied Optics · doi:10.1364/ao.42.003882 · Cited by 96 · see citing works
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A New Method for the Precise Measurement of Wafer Roll off of Silicon Polished Wafer
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An uncertainty evaluation for multiple measurements by GUM, III: using a correlation coefficient
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Park, J., Jin, J., Wan Kim, J., & Kim, J.-A. (2013) · Optics Communications · doi:10.1016/j.optcom.2013.03.055 · Cited by 43 · see citing works
Self-citationSumihara, K. A., Okubo, S., Okano, M., Inaba, H., & Watanabe, S. (2022) · Optics Express · doi:10.1364/oe.445134 · Cited by 13 · see citing works
- Authors
- Maeng, S., Park, J., O, B., & Jin, J.
- Affiliations
- Korea Research Institute of Standards and Science (KR)
- Venue
- Optics Express
- Publisher
- Optica Publishing Group
- Published
- 2012-05-14
- Volume
- 20
- Issue
- 11
- Pages
- 12184
- ISSN
- 1094-4087 (ISSN-L)
- OpenAlex
- W2032128953
- Cited by
- 58
- References
- 7
- Citations by year
- 2026: 2 · 2024: 4 · 2023: 4 · 2022: 3 · 2021: 8 · 2020: 3 · 2019: 4 · 2018: 5 · 2017: 4 · 2016: 7 · 2015: 5 · 2014: 6 · 2013: 3
- FWCI
- 4.61
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Optics Express (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Computer Science › Computer Vision and Pattern Recognition › Optical measurement and interference techniques
- Physical Sciences › Engineering › Mechanical Engineering › Advanced Measurement and Metrology Techniques
- Social Sciences › Decision Sciences › Statistics, Probability and Uncertainty › Scientific Measurement and Uncertainty Evaluation
- Keywords
- silicon wafers, refractive index measurement, measurement uncertainty, spectral bandwidth, environmental disturbance, dispersion effects
- MeSH terms
- Algorithms, Data Interpretation, Statistical, Interferometry, Lasers, Refractometry, Silicon
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