Improvement of RRAM Device Performance Through On-Chip Resistors
Abstract
Research in non-volatile memories (NVM) has intensified in the past few years due to the ever increasing demand for information storage and the near ubiquity of handheld electronics. Resistive memory is a leading contender in this NVM market due to its high endurance, random accessibility, scalability and low programming voltage. The addition of an external series resistor or imposing current compliance is often used to limit the current through RRAM devices and to prevent “over-programming” and stuck-at-one (SA1) errors. Here, we demonstrate that utilizing an external series resistor is not efficient in preventing over-programming and an on-chip resistor is more desirable. Poly-silicon bottom electrode based devices (with the poly-silicon electrode acting like an on-chip resistor) and metal bottom electrode devices were fabricated and tested. The presence of the on-chip resistor is shown to enhance the endurance of the RRAM device. This technique of including an on-chip resistor prevents stored current discharge through the device as the device transitions from a high resistance to a low resistance state. A SPICE simulation is also employed to illustrate the benefit of this approach.
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In these devices, the filament characteristics can be controlled during programming by external circuit parameters such as series-resistance and programming pulse height/width, so similar switching characteristics can be obtained in different devices.
“In particular, in these devices the filament characteristics can be controlled during programming by external circuit parameters such as series-resistance (29) and programming pulse height/width (14,17) so similar switching characteristics can be obtained in different devices.”
From Stochastic memristive devices for computing and neuromorphic applications (2013) · cites this paper as [29]
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Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080 · see citing works
Rayleigh, L. (1878) · Proceedings of the London Mathematical Society · doi:10.1112/plms/s1-10.1.4 · Cited by 3,083 · see citing works
Kim, K.-H., Gaba, S., Wheeler, D., Cruz-Albrecht, J. M., Hussain, T., Srinivasa, N., & Lu, W. (2012) · Nano Letters · doi:10.1021/nl203687n · Cited by 924 · see citing works
Self-citationHigh-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574 · see citing works
Self-citationDevice and SPICE modeling of RRAM devices
Sheridan, P., Kim, K.-H., Gaba, S., Chang, T., Chen, L., & Lu, W. (2011) · Nanoscale · doi:10.1039/c1nr10557d · Cited by 98 · see citing works
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Stochastic memristive devices for computing and neuromorphic applications
Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr01176c · Cited by 307 · see citing works
“In particular, in these devices the filament characteristics can be controlled during programming by external circuit parameters such as series-resistance (29) and programming pulse height/width (14,17) so similar switching characteristics can be obtained in different devices.”
BackgroundSelf-citationUltralow Sub-1-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics
Gaba, S., Cai, F., Zhou, J., & Lu, W. D. (2014) · IEEE Electron Device Letters · doi:10.1109/led.2014.2363618 · Cited by 40 · see citing works
Self-citation
- Authors
- Gaba, S., Choi, S., Sheridan, P., Chang, T., Yang, Y., & Lu, W.
- Affiliations
- University of Michigan (US)
- Venue
- MRS Proceedings
- Published
- 2012
- Volume
- 1430
- ISSN
- 0272-9172 (ISSN-L)
- 1946-4274
- OpenAlex
- W2042908488
- Cited by
- 2
- References
- 5
- Citations by year
- 2014: 1 · 2013: 1
- FWCI
- 0.41
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- MRS Proceedings (publishedVersion)
- Funders
- National Science Foundation
- University of Michigan
- Defense Advanced Research Projects Agency
- Multidisciplinary University Research Initiative
- Division of Electrical, Communications and Cyber Systems
- Air Force Office of Scientific Research
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive random access memory, on-chip resistors, non-volatile memory, device endurance, compliance current
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