The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications
Open accessAbstract
Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.
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Citations
Cites
Optimum semiconductors for high-power electronics
Shenai, K., Scott, R. S., & Baliga, B. J. (1989) · IEEE Transactions on Electron Devices · doi:10.1109/16.34247 · Cited by 620
Performance evaluation of high-power wide band-gap semiconductor rectifiers
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High voltage GaN Schottky rectifiers
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Testing, characterization, and modeling of SiC diodes for transportation applications
Ozpineci, B., Tolbert, L. M., ISLAM, S. K., et al. (2003) · doi:10.1109/psec.2002.1023051 · Cited by 36
Self-citationShelton, B. S., Zhu, T. G., Lambert, D. J. H., et al. (2001) · IEEE Transactions on Electron Devices · doi:10.1109/16.936497 · Cited by 23
Diamond field-emission triode with low gate turn-on voltage and high gain
Wisitsoraat, A., Kang, W. P., Davidson, J. L., et al. (2003) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.1516186 · Cited by 22
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System Impact of Silicon Carbide Power Electronics on Hybrid Electric Vehicle Applications
Ozpineci, B. (2002) · Cited by 20
Self-citationA new assessment of the use of wide bandgap semiconductors and the potential for GaN
Hudgins, J. L., Simin, G., & Khan, M. A. (2003) · doi:10.1109/psec.2002.1023063 · Cited by 15
SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES
Ozpineci, B., Tolbert, L. M., ISLAM, S. K., et al. (2002) · International Journal of High Speed Electronics and Systems · doi:10.1142/s0129156402001368 · Cited by 14
Self-citationDiamond microelectromechanical sensors for pressure and acceleration sensing
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High temperature capability of devices on Si and wide bandgap materials
Trivedi, M., & Shenai, K. (2002) · Conference record · doi:10.1109/ias.1998.730261 · Cited by 8
Diamond field emission triode with low gate turn-on voltage and high gain
Wisitsoraat, A., Kang, W. P., Davidson, J. L., et al. (2002) · International Conference on Vacuum Microelectronics · doi:10.1109/ivmc.2001.939765 · Cited by 4
Flagged first, then by citations
Research works printed but not linked: 2
- B. Ozpineci, L. M. Tolbert, S. K. Islam, and Md. Hasanuzzaman, "Effects of silicon carbide (SiC) power devices on PWM inverter losses," 27th Annual Conference of the IEEE Industrial Electronics Society (IECON'01), Denver, Colorado, 2002, pp. 1187-1192.
- B. Ozpineci, L. M. Tolbert, S. K. Islam, ""System level benefits of SiC power devices in dc-dc converters," 10th European Conference on Power Electronics and Applications (EPE 2003), Toulouse, France, September 2-4, 2003.
Cited by
Sorted by citations
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24
“Third, SiC has a higher saturation velocity (2 × 10 7 cm/s vs. 1 × 10 7 cm/s) compared to Si [5].”
BackgroundInfluential
Metadata
- Authors
- Ozpineci, B.
- Corresponding author
- Ozpineci, B.
- ORCID
- Ozpineci, B.
- Published
- 2004-01-02
- OpenAlex
- W2102175563
- Cited by
- 186
- References
- 15
- Citations by year
- 2026: 5 · 2025: 5 · 2024: 17 · 2023: 13 · 2022: 12 · 2021: 10 · 2020: 10 · 2019: 9 · 2018: 18 · 2017: 14 · 2016: 17 · 2015: 7 · 2014: 7 · 2013: 11 · 2012: 4
- Type
- report
- Language
- en
- Open access
- gold
- doi.org
- Locations
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- University of North Texas Digital Library (University of North Texas) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
- Keywords
- wide bandgap semiconductors, power semiconductor devices, silicon carbide, gallium nitride, diamond, silicon substitution, blocking voltage, switching frequency, power device reliability
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