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Cited by 30Advancements in Photolithography TechniquesAdvanced X-ray Imaging TechniquesNanofabrication and Lithography Techniques

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

EUV Resist Process Performance Investigations on the NXE3100 Full Field Scanner

Open access
Goethals, Anne-Marie, Foubert, Philippe, Hosokawa, Kohei, Roey, Frieda Van, Niroomand, Ardavan, Heuvel, Dieter Van den, Pollentier, Ivan·2012·Journal of Photopolymer Science and Technology
DOI 10.2494/photopolymer.25.559
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Abstract

Extreme Ultraviolet (EUV) Lithography is a candidate for device manufacturing at the 22nm half pitch node and beyond. The key challenge for EUV resists remains to simultaneously meet the requirements for Sensitivity, Resolution and Line-edge-roughness (LER) for Line/Space features (LS), respectively local CD uniformity (LCDU) for Contact holes (CH). The introduction of the ASML NXE:3100 pre-production EUV scanner at Imec, with off-axis illumination provides resolution capability well below 22nm. In this paper we make a assessment of the EUV resist performance for 22nm LS and 28-26nm contacts on the NXE:3100. At 22nm feature sizes, pattern collapse and LER become the main resolution and process windows limiters. The application of FIRMTM Extreme 10 rinse was found to be effective to improve the collapse margin and reduce LER on several resists. Using dipole illumination setting, we achieved 22nm LS at 13.5mJ/cm2 with 3.1nm (3σ) LER with wide processing latitudes. Several resists resolved down to 20nm LS. Champion resolution of 19nm LS was obtained in one resist at 20mJ/cm2. Using quasar illumination, 28nm HP contact holes were obtained with LCDU value of 1.0nm (1σ) at <20mJ/cm2, showing wide process latitudes. Printing 26nm HP contacts is feasible but requires further improvement in LCDU and contact shape circularity.

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Research works printed but not linked: 3

  1. [1] E. Hendrickx, J. Hermans, G. Lorusso, V. Philipsen, Ph. Foubert, I. Pollentier, M. Goethals, R. Jonckheere, G. Vandenberghe and K. Ronse, $ldquo;From ASML Alpha Demo Tool to ASML NXE:3100 at Imec”, 2011 International Symposium on Extreme Ultraviolet Lithography, October 17-19, 2011, Miami, USA.
  2. [3] A.M. Goethals, A. Niroomand, K. Ban, K. Hosokawa, F. Van Roey, O. Pollentier, D. Van den Heuvel and K. Ronse, 2010 EUVL symposium, October 17-20, 2010, Kobe, Japan.
  3. [4] A.M. Goethals, A. Niroomand, K. Hosokawa, F. Van Roey, I. Pollentier and D. Van den Heuvel, “EUV resist performance update on ADT and NXE:3100 scanner”, 2011 International Symposium on Extreme Ultraviolet Lithography, October 17-19, 2011, Miami, USA.

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Metadata

Authors
Goethals, A.-M., Foubert, P., Hosokawa, K., Roey, F. V., Niroomand, A., Heuvel, D. V. D., & Pollentier, I.
Affiliations
  • IMEC (BE)
  • Micron (United States) (US)
ORCID
Venue
Journal of Photopolymer Science and Technology
Publisher
Technical Association of Photopolymers, Japan
Published
2012
Volume
25
Issue
5
Pages
559-567
ISSN
  • 0914-9244 (ISSN-L)
  • 1349-6336
DOI
10.2494/photopolymer.25.559
OpenAlex
W1973123888
Cited by
30
References
7
Citations by year
2024: 3 · 2023: 1 · 2022: 2 · 2021: 1 · 2020: 1 · 2019: 4 · 2018: 2 · 2015: 3 · 2014: 9 · 2013: 4
FWCI
3.27
Type
journal article
Language
en
Open access
Locations
Journal of Photopolymer Science and Technology (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
  • Physical Sciences › Materials Science › Surfaces, Coatings and Films › Nanofabrication and Lithography Techniques
Keywords
EUV lithography, EUV resist, line edge roughness, pattern collapse, dipole illumination, off-axis illumination, 22 nm technology node, resist sensitivity

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