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Properties of Al2O3 Thin Films Grown by PE-ALD at Low Temperature Using H2O and O2 Plasma Oxidants
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Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced atomic layer deposition at 70 °C. Trimethylaluminum was used as organometallic precursor, O2 and H2O as oxidant agents and Ar as a purge gas. The deposition cycle consisted of 50 ms TMA pulse/10 s purge time/6 s of plasma oxidation at 200 W/10 s purge time. The optical constants and thicknesses of the grown layers were determined by spectroscopic ellipsometry, while the roughness was measured by atomic force microscopy, giving RMS values in the 0.29–0.32 nm range for films deposited under different conditions and having different thicknesses. High transmittance, ~90%, was measured by UV–Vis spectroscopy. X-ray photoelectron spectroscopy revealed that, with both types of oxidants, the obtained films are close to stoichiometric composition and, with high purity, no carbon was detected. Electrical characterization showed good insulating properties of both types of films, though the H2O oxidant leads to better I-V characteristics.
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“Aluminium oxide or alumina (Al2O3) is used in electronic and optoelectronic devices due to its dielectric and protective characteristics, while its high transparency in a wide wavelength range makes it a suitable candidate for optical coatings [79,80].”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [79]
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Metal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2
Metadata
- Authors
- Castillo-Saenz, J., Nedev, N., Valdez-Salas, B., Curiel-Alvarez, M., Mendivil-Palma, M. I., Hernandez-Como, N., Martinez-Puente, M., Mateos, D., Perez-Landeros, O., & Martinez-Guerra, E.
- Affiliations
- Universidad Autónoma de Baja California (MX)
- Instituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali 21280, Mexico
- Centro de Investigación en Materiales Avanzados, S.C. (CIMAV-Sede Monterrey), Alianza Norte 202. Parque de Investigación e Innovación Tecnológica, Apodaca 66600, Mexico
- Centro de Nanociencias y Micro y Nanotecnologías, Instituto Politécnico Nacional, Av. Luis Enrique Erro s/n, Unidad Profesional Adolfo López Mateos, Zacatenco, Alcaldía Gustavo A. Madero, Ciudad de Mexico 07738, Mexico
- Corresponding author
- Castillo-Saenz, Jhonathan
- Nedev, Nicola
- ORCID
- Venue
- Coatings
- Publisher
- MDPI AG
- Published
- 2021-10-19
- Volume
- 11
- Issue
- 10
- Pages
- 1266
- ISSN
- 2079-6412 (ISSN-L)
- OpenAlex
- W3206341704
- Cited by
- 36
- References
- 39
- Citations by year
- 2026: 7 · 2025: 11 · 2024: 9 · 2023: 7 · 2022: 2
- FWCI
- 1.32
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Coatings (publishedVersion, cc-by)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Copper Interconnects and Reliability
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
- Keywords
- Al2O3 thin films, plasma-enhanced atomic layer deposition, low-temperature deposition, trimethylaluminum precursor, film thickness, surface roughness, optical transmittance, stoichiometry, electrical insulation, current-voltage characteristics
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