The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Open accessAbstract
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
A Review on Conduction Mechanisms in Dielectric Films
Chiu, F.-C. (2014) · Advances in Materials Science and Engineering · doi:10.1155/2014/578168 · Cited by 1,574
Electrochemical metallization memories—fundamentals, applications, prospects
Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921
Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348
Cited by
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Gül, F. (2019) · Results in Physics · doi:10.1016/j.rinp.2018.12.092 · Cited by 127
The fabrication and MOSFET-only circuit implementation of semiconductor memristor
Babacan, Y., Yesil, A., & Gul, F. (2018) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2808530 · Cited by 98
Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor
Gul, F., & Efeoglu, H. (2017) · Superlattices and Microstructures · doi:10.1016/j.spmi.2016.11.043 · Cited by 77
In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors
Zhu, S., Sun, B., Zhou, G., Guo, T., Ke, C., Chen, Y., Yang, F., Zhang, Y., Shao, J., & Zhao, Y. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c16569 · Cited by 76
Metadata
- Authors
- Lim, E., & Ismail, R.
- Venue
- Electronics
- Publisher
- MDPI AG
- Published
- 2015-09-09
- Volume
- 4
- Issue
- 3
- Pages
- 586-613
- ISSN
- 2079-9292 (ISSN-L)
- OpenAlex
- W1678748398
- Cited by
- 829
- References
- 6
- FWCI
- 14.11
- Type
- journal article
- Language
- en
- Open access
- gold
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey. https://app.cochat.ai/papers/10.3390/electronics4030586
- The paper
- Lim, E., & Ismail, R. (2015). Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey. Electronics. https://doi.org/10.3390/electronics4030586
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
