The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Variable Amplitude Gate Voltage Synchronous Drive Technique for Improving Dynamic Current Balancing in Paralleled IGBTs
Abstract
The problem of current sharing imbalance in the parallel connection of IGBT multi-modules affects the wide-scale application of parallel IGBT. The current imbalance problem in the dynamic process is mainly caused by the difference in control loop parameters. In parallel IGBT applications, current sharing is a critical concern. Objective differences in IGBT module and driver circuit parameters, as well as incomplete symmetry in the power circuit, lead to inconsistent parasitic parameters, resulting in both static and dynamic current-sharing issues. Static current sharing refers to the uneven distribution of load current under static operating conditions, while dynamic current sharing refers to the imbalance in current distribution among parallel IGBT modules during turn-on and turn-off processes. This is mainly influenced by the synchronization of turn-on and turn-off timings and the consistency of collector current change rates during these processes. The difference in characteristic parameters of IGBT modules is an important factor leading to the difference in control loop parameters, which has a profound impact on the dynamic current-sharing characteristics of IGBT parallel applications. In the case where the device parameters cannot be changed, some drive compensation controls can compensate for the influence of device differences on dynamic current sharing. Accurate identification of the characteristic parameters of the IGBT module is the key to this method. This paper mainly studies a synchronous variable-amplitude drive scheme and studies the influence of parameters such as synthetic gate resistance, gate-emitter capacitance, and on-off gate threshold voltage on the dynamic current-sharing characteristics. The correlation characteristics of the characteristic parameters of the IGBT device body are studied, and the characteristic model of each parameter and the influencing variable is constructed. The parallel working model of PSpice devices is established, and the influence of different characteristic parameters on the current-sharing characteristics is evaluated, and its sensitivity is summarized through simulation analysis. Through the 1700 V/300 A IGBT parallel switch characteristic experiment, the current sharing effectiveness of the synchronous variable amplitude driving method is verified. Finally, the effects of different gate control voltages and different action times on the dynamic current-sharing characteristics are summarized.
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Cites
Peng, C., Li, X., Fan, J., Zhao, Z., Tang, X., & Cui, X. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3164544 · Cited by 36
Self-citationLi, Z.-F., Nishida, N., Aoki, H., Shibata, H., Liao, C.-C., & Huang, M.-S. (2022) · IEEE Access · doi:10.1109/access.2022.3144575 · Cited by 9
Research works printed but not linked: 22
- Ma, 2015, Research on the IGBT Paralleling Application, High Power Convert. Technol., 2, 35, 10.1016/j.powtec.2015.04.043 · DOI
- Matallana, A., Andreu, J., Garate, J.I., de Alegria, I.M., and Kortabarria, I. (2017, January 19–21). Analysis of impedance and current distributions in parallel IGBT design. Proceedings of the 2017 IEEE 26th International Symposium on Industrial Electronics (ISIE), Edinburgh, UK. · DOI · Paper page
- Spang, M., and Katzenberger, G. (2016, January 5–9). Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load. Proceedings of the 2016 18th European Conference on Power Electronics and Applications (EPE’16 ECCE Europe), Karlsruhe, Germany. · DOI
- Zhang, 2010, Parallel Technologies of Power module for Traction Power Supply with Energy Feedback, Trans. China Electrotech. Soc., 25, 78
- Liu, 2018, Application of thyristor controlled phase shifting transformer excitation impedance switching control to suppress short-circuit fault current level, J. Mod. Power Syst. Clean Energy, 6, 821, 10.1007/s40565-017-0372-2 · DOI
- Wissen, M., Domes, D., Brekel, W., and Yilmaz, K. (2018, January 20–22). How asymmetric busbar design causes symmetric switching behavior of paralleled IGBT modules. Proceedings of the CIPS 2018; 10th International Conference on Integrated Power Electronics Systems, Stuttgart, Germany.
- Kong, L., Zhang, D., Puqi, N., Zhang, J., and Qiu, Z. (September, January 31). The IGBT module layout design considering the electrical and thermal performance. Proceedings of the 2014 IEEE Conference and Expo Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), Beijing, China. · DOI
- Martin, 2007, Analysis of Electromagnetic Coupling and Current Distribution Inside a Power Module, IEEE Trans. Ind. Appl., 43, 893, 10.1109/TIA.2007.900453 · DOI
- Zhang, 2013, Paralleling Current Sharing Method of Parallel IGBTs Based on Circuit Topology, High Volt. Eng., 39, 505
- Wang, 2010, Research on dynamic current sharing of parallel high-power IGBTs, Electr. Autom., 32, 10
- Weigel, J., Boehmer, J., Wahl, E., Nagel, A., and Krafft, E.U. (2018, January 17–21). Paralleling of High Power Dual Modules: Standard Building Block Design for Evaluation of Module Related Current Mismatch. Proceedings of the 2018 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe), Riga, Latvia.
- Wissen, M., Domes, D., Brekel, W., Holtij, T., and Groove, A. (2017, January 5–7). Effects of Influencing the Individual Leg Inductance in Case of Paralleling Modules on Basis of XHP 3 and EconoDUAL. Proceedings of the PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany.
- Alvarez, R., and Bernet, S. (2011, January 17–22). A new delay time compensation principle for parallel connected IGBTs. Proceedings of the 2011 IEEE Energy Conversion Congress and Exposition, Phoenix, AZ, USA. · DOI · Paper page
- Matallana, A., Andreu, J., Garate, J.I., Aretxabaleta, I., and Planas, E. (2016, January 23–26). Analysis and modelling of IGBTs parallelization fundamentals. Proceedings of the IECON 2016—42nd Annual Conference of the IEEE Industrial Electronics Society, Florence, Italy. · DOI
- Tang, 2017, Dynamic Electrothermal Model of Paralleled IGBT Modules with Unbalanced Stray Parameters, IEEE Trans. Power Electron., 32, 1385, 10.1109/TPEL.2016.2542198 · DOI · Paper page
- Huang, 2021, Asynchronous Gate Signal Driving Method for Reducing Current Imbalance of Paralleled IGBT Modules Caused by Driving Circuit Parameter Difference, IEEE Access, 9, 86523, 10.1109/ACCESS.2021.3089495 · DOI
- Schlapbach, U. (2010, January 16–18). Dynamic paralleling problems in IGBT module construction and application. Proceedings of the 2010 6th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany.
- Jadhav, V., Zhou, Y., and Jansen, U. (2016, January 28–30). Analysis of Different IGBT Gate Driver Strategies Influencing Dynamic Paralleling Performance. Proceedings of the PCIM Asia 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Shanghai, China.
- Wang, 2022, An RLL current sharing snubber for multiple parallel IGBTs in high power applications, IEEE Trans. Power Electron., 37, 7555, 10.1109/TPEL.2022.3148266 · DOI · Paper page
- Zeng, 2019, Embedded hardware artificial neural network control for global and real-time imbalance current suppression of parallel connected IGBTs, IEEE Trans. Ind. Electron., 67, 2186, 10.1109/TIE.2019.2905825 · DOI
- Lu, 2019, Investigation of a rectangular heat pipe radiator with parallel heat flow structure for cooling high-power IGBT modules, Int. J. Therm. Sci., 135, 83, 10.1016/j.ijthermalsci.2018.09.004 · DOI
- Yuan, 2021, A real-time aging monitoring method of parallel-connected IGBT modules, Mater. Sci. Semicond. Process., 124, 105555, 10.1016/j.mssp.2020.105555 · DOI
Metadata
- Authors
- Zhang, J., Lei, E., Jin, L., Ma, K., Li, Y., Li, X., Xia, C., & Wang, X.
- Venue
- Energies
- Publisher
- MDPI AG
- Published
- 2023-07-11
- Volume
- 16
- Issue
- 14
- Pages
- 5306
- ISSN
- 1996-1073
- Cited by
- 6
- References
- 2
- Language
- en
- Funders
- Scientific and Technological Projects of China Southern Power Grid Company, Ltd. (GDKJX M20212014)
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