Stress and Refractive Index Control of SiO2 Thin Films for Suspended Waveguides
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Film stress and refractive index play an important role in the fabrication of suspended waveguides. SiO2 waveguides were successfully fabricated on multiple substrates including Si, Ge, and Al2O3 wafers; the waveguides were deposited using inductively coupled plasma chemical vapor deposition at 100 °C. The precursor gases were SiH4 and N2O at 1:3 and 1:9 ratios with variable flow rates. The occurrence of intrinsic stress was validated through the fabrication of suspended SiO2 bridges, where the curvature of the bridge corresponded to measured intrinsic stress, which measured less than 1 µm thick and up to 50 µm in length. The flow rates allow film stress tunability between 50 and −65 MPa, where a negative number indicates a compressive state of the SiO2. We also found that the gas ratios have a slight influence on the refractive index in the UV and visible range but do not affect the stress in the SiO2 bridges. To test if this method can be used to produce multi-layer devices, three layers of SiO2 bridges with air cladding between each bridge were fabricated on a silicon substrate. We concluded that a combination of low temperature deposition (100 °C) and photoresist as the sacrificial layer allows for versatile SiO2 bridge fabrication that is substrate and refractive index independent, providing a framework for future tunable waveguide fabrication.
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In ICPVD deposition of SiO2, gas flow is the primary parameter that can adjust stress between tensile and compressive states without significantly altering the refractive index.
“Recent studies [156] have also shown that the gas flow during ICPVD deposition is the primary parameter that can adjust the stress in SiO2 thin films between tensile and compressive states, whilst not significantly altering the refractive index of the material.”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [156]
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Cites
The tension of metallic films deposited by electrolysis
Stoney, G. G. (1909) · Proceedings of the Royal Society of London Series A Containing Papers of a Mathematical and Physical Character · doi:10.1098/rspa.1909.0021 · Cited by 4,906 · see citing works
Stress-related problems in silicon technology
Hu, S. M. (1991) · Journal of Applied Physics · doi:10.1063/1.349282 · Cited by 512 · see citing works
Self-consistent optical constants of SiO_2 and Ta_2O_5 films
Marcos, L. R.-D., Larruquert, J. I., Méndez, J. A., & Aznárez, J. A. (2016) · Optical Materials Express · doi:10.1364/ome.6.003622 · Cited by 340 · see citing works
Keller, R.-M., Baker, S. P., & Arzt, E. (1998) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.1998.0186 · Cited by 259 · see citing works
Optimization of a low-stress silicon nitride process for surface-micromachining applications
French, P. J., Sarro, P. M., Mallée, R., Fakkeldij, E. J. M., & Wolffenbuttel, R. F. (1997) · Sensors and Actuators A Physical · doi:10.1016/s0924-4247(96)01397-0 · Cited by 167 · see citing works
Refractive index of thin films of SiO_2, ZrO_2, and HfO_2 as a function of the films’ mass density
Jerman, M., Qiao, Z., & Mergel, D. (2005) · Applied Optics · doi:10.1364/ao.44.003006 · Cited by 154 · see citing works
Kinetic Model for Dependence of Thin Film Stress on Growth Rate, Temperature, and Microstructure
Chason, E., Shin, J. W., Hearne, S. J., & Freund, L. B. (2012) · Journal of Applied Physics · doi:10.1063/1.4704683 · Cited by 134 · see citing works
Spectrophotometric analysis of aluminum nitride thin films
Joo, H.-Y., Kim, H. J., Kim, S. J., & Kim, S. Y. (1999) · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · doi:10.1116/1.582035 · Cited by 102 · see citing works
Aslan, M. M., Webster, N. A., Byard, C. L., Pereira, M. B., Hayes, C. M., Wiederkehr, R. S., & Mendes, S. B. (2010) · Thin Solid Films · doi:10.1016/j.tsf.2010.03.011 · Cited by 100 · see citing works
Coherent ultra-violet to near-infrared generation in silica ridge waveguides
Oh, D. Y., Yang, K. Y., Fredrick, C. D., Ycas, G. G., Diddams, S. A., & Vahala, K. J. (2017) · Nature Communications · doi:10.1038/ncomms13922 · Cited by 86 · see citing works
Nissen, M., Doherty, B., Hamperl, J., Kobelke, J., Weber, K., Henkel, T., & Schmidt, M. A. (2018) · Sensors · doi:10.3390/s18020478 · Cited by 75 · see citing works
PECVD amorphous silicon carbide membranes for cell culturing
Iliescu, C., Chen, B., Poenar, D. P., & Lee, Y. Y. (2007) · Sensors and Actuators B Chemical · doi:10.1016/j.snb.2007.08.043 · Cited by 70 · see citing works
Behzadirad, M., Nami, M., Wostbrock, N., Kouhpanji, M. R. Z., Feezell, D. F., Brueck, S. R. J., & Busani, T. L. (2018) · ACS Nano · doi:10.1021/acsnano.7b07653 · Cited by 55 · see citing works
Self-citationStress in chemical-vapor-deposited SiO2 and plasma-SiNx films on GaAs and Si
Blaauw, C. (1983) · Journal of Applied Physics · doi:10.1063/1.332779 · Cited by 52 · see citing works
Stress Control of Si-based PECVD Dielectrics
MacKenzie, K. J. D., Johnson, D. C., DeVre, M., Westerman, R., & Reelfs, B. H. (2006) · ECS Meeting Abstracts · doi:10.1149/ma2005-01/9/406 · Cited by 43 · see citing works
GaN nanowire tips for nanoscale atomic force microscopy
Behzadirad, M., Nami, M., Rishinaramagalam, A. K., Feezell, D. F., & Busani, T. L. (2017) · Nanotechnology · doi:10.1088/1361-6528/aa6c0b · Cited by 20 · see citing works
Self-citationLiao, B.-H., & Hsiao, C. (2014) · Applied Optics · doi:10.1364/ao.53.00a377 · Cited by 19 · see citing works
Dao, V. A., Nguyen, V.-D., Heo, J., Choi, H. W., Kim, Y., Lakshminarayan, N., & Yi, J. (2009) · Vacuum · doi:10.1016/j.vacuum.2009.09.002 · Cited by 18 · see citing works
Effects of the reaction parameters on the deposition characteristics in ZrO2 CVD
Choi, J., Kim, H., & Yoon, S. (1992) · Journal of Materials Science Materials in Electronics · doi:10.1007/bf00695722 · Cited by 17 · see citing works
Thermal annealing of thin PECVD silicon-oxide films for airgap-based optical filters
Ghaderi, M. A., de Graaf, G., & Wolffenbuttel, R. F. (2016) · Journal of Micromechanics and Microengineering · doi:10.1088/0960-1317/26/8/084009 · Cited by 15 · see citing works
Fabrication and characterization of suspended SiO_2 ridge optical waveguides and the devices
Chen, P., Zhu, Y., Shi, Y., Daoxin Dai, A., & He, S. (2012) · Optics Express · doi:10.1364/oe.20.022531 · Cited by 12 · see citing works
Jatta, S., Haberle, K., Klein, A., Schafranek, R., Kögel, B., & Meißner, P. (2009) · Plasma Processes and Polymers · doi:10.1002/ppap.200931405 · Cited by 8 · see citing works
Ghaderi, M. A., Ayerden, N. P., de Graaf, G., & Wolffenbuttel, R. F. (2014) · Procedia Engineering · doi:10.1016/j.proeng.2014.11.591 · Cited by 8 · see citing works
Chung, C. K., Lin, T.-Y., Duh, J., & Tsai, M.-Q. (2005) · Surface and Coatings Technology · doi:10.1016/j.surfcoat.2005.04.048 · Cited by 8 · see citing works
Optimisation and fabrication of low-stress, low-temperature silicon oxide cantilevers
Kshirsagar, A., Duttagupta, S. P., & Gangal, S. A. (2011) · Micro & Nano Letters · doi:10.1049/mnl.2011.0076 · Cited by 6 · see citing works
Revuri, P. K., Tripathi, D. K., Martyniuk, M. P., Silva, D., Putrino, G., KEATING, A. J., & Faraone, L. (2018) · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) · doi:10.1109/commad.2018.8715249 · Cited by 5 · see citing works
Realization of tunable optical components with ICP-CVD
Jatta, S., Zogal, K., Kögel, B., Haberle, K., Sydlo, C., & Meissner, P. M. (2008) · Frequenz · doi:10.1515/freq.2008.62.3-4.96 · Cited by 3 · see citing works
Fabrication of Ultrathin Large-area Dielectric Membrane Stacks for use as Interference Filters
Ghaderi, M. A., de Graaf, G., & Wolffenbuttel, R. F. (2016) · Procedia Engineering · doi:10.1016/j.proeng.2016.11.369 · Cited by 3 · see citing works
Flagged first, then by citations
Research works printed but not linked: 1
- [25]Ohring M. Materials Science of Thin Films 2nd ed. Academic Press Cambridge, MA, USA 2002 978-0-585-47097-9
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Sorted by citations
Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation
Zhang, W., Li, J., Xing, Y., Nie, X., Lang, F., Yang, S., Hou, X., & Zhao, C. (2020) · Coatings · doi:10.3390/coatings11010023 · Cited by 41 · see citing works
Liang, C., Zhong, Y., Zhong, Q., Li, J., Cao, W., Wang, X., Wang, S., Xu, X., Wang, J., & Cao, Y. (2022) · Coatings · doi:10.3390/coatings12101411 · Cited by 10 · see citing works
Wang, Z., Zhang, J., Zhang, L., Ruan, X., Tang, W., & Chu, T. (2022) · Micromachines · doi:10.3390/mi14010066 · Cited by 7 · see citing works
Stricklin, I., Gotszalk, T. P., Behzadirad, M., Manske, E., Kissinger, T., Rangelow, I. W., & Busani, T. L. (2023) · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · doi:10.1116/6.0002486 · Cited by 6 · see citing works
Self-citationHe, Z., Gao, J., Liu, C., Li, Z., Xu, K., & Zhuang, S. (2024) · Thin Solid Films · doi:10.1016/j.tsf.2024.140530 · Cited by 3 · see citing works
Zhang, K., Chen, J., Cheng, X., Miao, X., & Xia, Z. (2025) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ae0516 · Cited by 3 · see citing works
Metal Oxide Thin Films for Advanced Photonic Applications
Stîngescu, M.-L., Șopronyi, M.-A., Antohe, Ș., & Scărișoreanu, N.-D. (2026) · Crystals · doi:10.3390/cryst16030164 · Cited by 2 · see citing works
“Recent studies [156] have also shown that the gas flow during ICPVD deposition is the primary parameter that can adjust the stress in SiO 2 thin films between tensile and compressive states, whilst not significantly altering the refractive index of the material.”
Park, M., Seong, M., Jeong, J., Lee, S., Song, J. H., Ko, H., Lee, G., Sul, W., Lee, W.-C., Kim, S., et al. (2024) · Solid-State Electronics · doi:10.1016/j.sse.2024.109012 · Cited by 2 · see citing works
Guerrero, E. G., Posada, P. A., Rojas, J. F. R., Rincón-Ortiz, R. J., Amaya, J., Pérez, D. L., & Rozo, A. P. (2026) · Surfaces and Interfaces · doi:10.1016/j.surfin.2026.108746 · Cited by 1 · see citing works
Wang, Z., Zhang, H., Wang, J., Hu, C., & Yin, K. (2023) · Optoelectronic devices and integration. Conference · doi:10.1117/12.2686944
Stricklin, I., & Busani, T. L. (2026) · SPIE Novel Patterning Technologies · doi:10.1117/12.3090891
Self-citationEssalah, G., Duponchel, B., Guermazi, H., Leroy, G., & GUERMAZI, S. (2026) · Ceramics International · doi:10.1016/j.ceramint.2026.08.229
Park, H., Oh, I., Hong, S., Lee, S., Jang, Y., Chu, S., Kang, J., Bae, J., Mohammed, S. A., Jin, H., et al. (2026) · Thin Solid Films · doi:10.1016/j.tsf.2026.141056
- Authors
- Wostbrock, N., & Busani, T.
- Affiliations
- University of New Mexico (US)
- Corresponding author
- Busani, Tito
- ORCID
- Busani, Tito
- Venue
- Nanomaterials
- Publisher
- MDPI AG
- Published
- 2020-10-23
- Volume
- 10
- Issue
- 11
- Pages
- 2105
- ISSN
- 2079-4991 (ISSN-L)
- PMC
- PMC7690675
- OpenAlex
- W3093556303
- Cited by
- 12
- References
- 28
- Citations by year
- 2026: 4 · 2025: 1 · 2024: 2 · 2023: 2 · 2022: 2 · 2020: 1
- FWCI
- 0.43
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Nanomaterials (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
- Funders
- National Science Foundation (1160494)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced MEMS and NEMS Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- SiO2 thin films, suspended waveguides, intrinsic stress, refractive index, inductively coupled plasma chemical vapor deposition, low-temperature deposition, tunable waveguides, substrate independence
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