The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Current Sharing Control Strategy for IGBTs Connected in Parallel
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In the citing paper
“Furthermore, the gate voltage control method based on the current average calculation and current cross-reference is presented in [12], and results are demonstrated for two independent parallel-connected transistors and for the boost converter implementation.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [12]
In the citing paper
“Furthermore, paralleling provides compelling advantages: better performance-to-cost and cost-per-ampere ratios, flexible connection and operation, better thermal distribution, and high-power density [9][10][11][12].”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [12]
In the citing paper
“One rudimental means of minimizing unbalancing is the selection of the appropriate devices by ensuring the identical device parameters and other technical passive techniques [9,12,16].”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [12]
In the citing paper
“although the paralleling of transistors is an object of significant research [40][41][42][43][44], the application of this topology in the self-resonance architectures requires additional investigation.”
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Citations
Cites
Wu, R., Smirnova, L., Wang, H., Iannuzzo, F., & Blaabjerg, F. (2015) · 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.1109/icpe.2015.7167881 · Cited by 47
Azar, R., Udrea, R., Ng, W. T., Dawson, F., Findlay, W., & Waind, P. (2008) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2007.909182 · Cited by 40
Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs
Wu, Y., Sun, Y., & Lin, Y. (2014) · Journal of Power Electronics · doi:10.6113/jpe.2014.14.4.788 · Cited by 5
Research works printed but not linked: 4
- 2006, Fuji Electric Review, 52, 53
- 2015, IEEE Trans. Ind. Appl., 51, 539, 10.1109/TIA.2014.2330075 · DOI · Paper page
- 2012, Transactions of China Electrotechnical Society, 27, 155
- 2008, IEEE Trans. Plasma Sci., 36, 2632, 10.1109/TPS.2008.2003971 · DOI · Paper page
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Dimitrov, B., Hayatleh, K., Barker, S., & Collier, G. (2021) · Electricity · doi:10.3390/electricity2040026 · Cited by 3
Static Current Balancing Strategy for Parallel IGBTs Based on Parametric Compensation
Peng, L., Huang, H., & Wang, H. (2024) · IEEE Transactions on Plasma Science · doi:10.1109/tps.2024.3446817 · Cited by 2
Metadata
- Authors
- Perez-Delgado, R., Velasco-Quesada, G., & Roman-Lumbreras, M.
- Venue
- Journal of Power Electronics
- Published
- 2016-03-20
- Volume
- 16
- Issue
- 2
- Pages
- 769-777
- ISSN
- 1598-2092
- Cited by
- 12
- References
- 3
- Language
- en
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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
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Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
