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Cited by 265

The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.

Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs

Open access
Hwang, David, Mughal, Asad, Pynn, Christopher D., Nakamura, Shuji, DenBaars, Steven P.·2017·Applied Physics Express

Abstract

Ultrasmall blue InGaN micro-light-emitting diodes (µLEDs) with areas from 10 −4 to 0.01 mm 2 were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest µLEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AlInGaP LEDs. The efficiency droop at 900 A/cm 2 of the smallest µLED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall µLEDs may be fabricated without a significant loss in optical or electrical performance.

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Metadata

Authors
Hwang, D., Mughal, A., Pynn, C. D., Nakamura, S., & DenBaars, S. P.
Venue
Applied Physics Express
Published
2017-02-01
Volume
10
Issue
3
Pages
032101
ISSN
  • 1882-0778 (ISSN-L)
  • 1882-0786
OpenAlex
W2585555740
Cited by
265
References
6
FWCI
10.96
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs. https://app.cochat.ai/papers/10.7567/apex.10.032101
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Hwang, D., Mughal, A., Pynn, C. D., Nakamura, S., & DenBaars, S. P. (2017). Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs. Applied Physics Express. https://doi.org/10.7567/apex.10.032101

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